IPP032N06N3 - описание и поиск аналогов

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP032N06N3 IIPP032N06N3 FEATURES Static drain-source on-resistance RDS(on) 2.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

Type IPB029N06N3 G IPI032N06N3 G IPP032N06N3 G OptiMOS 3 Power-Transistor Product Summary V 60 V Features DS R 2.9 m Ideal for high frequency switching and sync. rec. DS(on),max (SMD) I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t

IPP032N06N3G www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( ) at VGS = 10 V 0.0035 TrenchFET Power MOSFET RDS(on) ( ) at VGS = 4.5 V 0.0090 Package with Low Thermal Resistance ID (A) 210 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 200

IPP034NE7N3 G IPI034NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 75 V DS Optimized technology for synchronous rectification R 3.4 m DS(on),max Ideal for high frequency switching and DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

Type IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Product Summary OptiMOS 3 Power-Transistor V 60 V DS Features R 3.4 m DS(on),max (SMD) Ideal for high frequency switching and sync. rec. I 90 A D Optimized technology for DC/DC converters previous engineering Excellent gate charge x R product (FOM) DS(on) sample codes Very low on-resistance RDS(on) IPP04xN06

Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G 3 Power-Transistor Product Summary Features V D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m x Q ( @D9=9J54 D538>?F5BD5BC I 1 D Q H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 + D n) #) ' ' ! Q ' 381>>5?B=1

Type IPP039N04L G IPB039N04L G OptiMOS 3 Power-Transistor Product Summary Features V 40 V DS Fast switching MOSFET for SMPS R 3.9 m DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 100 V IPP030N10N5 Data Sheet Rev. 2.1 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 100 V IPP030N10N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-re

IPP039N10N5 MOSFET TO-220-3 OptiMOS 5 Power-Transistor, 100 V tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free

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Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

IPP030N10N3 G IPI030N10N3 G OptiMOS 3 Power-Transistor Product Summary Features VDS 100 V N-channel, normal level RDS(on),max 3 mW Excellent gate charge x R product (FOM) DS(on) ID 100 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

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MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOS 5 Power-Transistor, 80 V IPP034N08N5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOS 5 Power-Transistor, 80 V IPP034N08N5 TO-220-3 1 Description tab Features Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM) DS(on) Very low on-resis

IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G OptiMOS 3 Power-Transistor Product Summary Features V 80 V DS Ideal for high frequency switching and sync. rec. R 3.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Excellent gate charge x R product (FOM) DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

Type IPP034N03L G IPB034N03L G 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 3.4 mW DS(on),max Optimized technology for DC/DC converters I 80 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on)

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP034N03L IIPP034N03L FEATURES Static drain-source on-resistance RDS(on) 3.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP037N06L3 IIPP037N06L3 FEATURES Static drain-source on-resistance RDS(on) 3.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP030N10N5 IIPP030N10N5 FEATURES Static drain-source on-resistance RDS(on) 3.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP039N10N5 IIPP039N10N5 FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP030N10N3 IIPP030N10N3 FEATURES Static drain-source on-resistance RDS(on) 3m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP037N08N3 IIPP037N08N3 FEATURES Static drain-source on-resistance RDS(on) 3.75m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUT

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP034N08N5 IIPP034N08N5 FEATURES Static drain-source on-resistance RDS(on) 3.4m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE

isc N-Channel MOSFET Transistor IPP039N04L,IIPP039N04L FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching for SMPS Optimized technology for DC/DC converters ABSOLUTE MAXIMUM RATINGS(T