INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP032N06N3IIPP032N06N3FEATURESStatic drain-source on-resistance:RDS(on) 2.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

Type IPB029N06N3 G IPI032N06N3 GIPP032N06N3 GOptiMOS3 Power-TransistorProduct SummaryV 60 VFeatures DSR 2.9m Ideal for high frequency switching and sync. rec. DS(on),max (SMD)I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t

IPP032N06N3Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0090 Package with Low Thermal ResistanceID (A) 210 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 200

IPP034NE7N3 GIPI034NE7N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 75 VDS Optimized technology for synchronous rectificationR 3.4mDS(on),max Ideal for high frequency switching and DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 +D n)#) ' ' !Q ' 381>>5?B=1

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP030N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP030N10N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-re

IPP039N10N5MOSFETTO-220-3OptiMOS5 Power-Transistor, 100 VtabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free

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Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

IPP030N10N3 G IPI030N10N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 100 V N-channel, normal levelRDS(on),max 3mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPP034N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPP034N08N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching and sync. rec.R 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP034N03LIIPP034N03LFEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP037N06L3IIPP037N06L3FEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP030N10N5IIPP030N10N5FEATURESStatic drain-source on-resistance:RDS(on) 3.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP039N10N5IIPP039N10N5FEATURESStatic drain-source on-resistance:RDS(on) 3.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP030N10N3IIPP030N10N3FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP037N08N3IIPP037N08N3FEATURESStatic drain-source on-resistance:RDS(on) 3.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUT

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP034N08N5IIPP034N08N5FEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

isc N-Channel MOSFET Transistor IPP039N04L,IIPP039N04LFEATURESStatic drain-source on-resistance:RDS(on) 3.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switching for SMPSOptimized technology for DC/DC convertersABSOLUTE MAXIMUM RATINGS(T