Справочник MOSFET. IPP032N06N3

 

IPP032N06N3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: IPP032N06N3
   Маркировка: 032N06N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 188 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 120 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 124 nC
   Время нарастания (tr): 120 ns
   Выходная емкость (Cd): 2200 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0032 Ohm
   Тип корпуса: TO220

 Аналог (замена) для IPP032N06N3

 

 

IPP032N06N3 Datasheet (PDF)

 ..1. Size:246K  inchange semiconductor
ipp032n06n3.pdf

IPP032N06N3
IPP032N06N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP032N06N3IIPP032N06N3FEATURESStatic drain-source on-resistance:RDS(on) 2.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

 0.1. Size:483K  infineon
ipb029n06n3g ipi032n06n3g ipp032n06n3g.pdf

IPP032N06N3
IPP032N06N3

Type IPB029N06N3 G IPI032N06N3 GIPP032N06N3 GOptiMOS3 Power-TransistorProduct SummaryV 60 VFeatures DSR 2.9m Ideal for high frequency switching and sync. rec. DS(on),max (SMD)I 120 A Optimized technology for DC/DC converters D Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche t

 0.2. Size:2470K  cn vbsemi
ipp032n06n3g.pdf

IPP032N06N3
IPP032N06N3

IPP032N06N3Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60DefinitionRDS(on) () at VGS = 10 V 0.0035 TrenchFET Power MOSFETRDS(on) () at VGS = 4.5 V 0.0090 Package with Low Thermal ResistanceID (A) 210 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 200

 9.1. Size:460K  1
ipi034ne7n3g ipp034ne7n3g.pdf

IPP032N06N3
IPP032N06N3

IPP034NE7N3 GIPI034NE7N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 75 VDS Optimized technology for synchronous rectificationR 3.4mDS(on),max Ideal for high frequency switching and DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

 9.2. Size:475K  infineon
ipb034n06l3g ipi037n06l3g ipp037n06l3g.pdf

IPP032N06N3
IPP032N06N3

Type IPB034N06L3 G IPI037N06L3 GIPP037N06L3 GProduct SummaryOptiMOS3 Power-TransistorV 60 VDSFeaturesR 3.4mDS(on),max (SMD) Ideal for high frequency switching and sync. rec.I 90 AD Optimized technology for DC/DC convertersprevious engineering Excellent gate charge x R product (FOM)DS(on)sample codes: Very low on-resistance RDS(on)IPP04xN06

 9.3. Size:264K  infineon
ipp039n04lg ipb039n04lg.pdf

IPP032N06N3
IPP032N06N3

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 9.4. Size:1018K  infineon
ipp037n08n3ge8181 ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf

IPP032N06N3
IPP032N06N3

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H3579>55B9>7 3?45 Q .5BI B5C9CD1>35 +D n)#) ' ' !Q ' 381>>5?B=1

 9.5. Size:344K  infineon
ipb039n04l-g ipp039n04l-g.pdf

IPP032N06N3
IPP032N06N3

Type IPP039N04L GIPB039N04L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.9mDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

 9.6. Size:1820K  infineon
ipp030n10n5.pdf

IPP032N06N3
IPP032N06N3

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 100 VIPP030N10N5Data SheetRev. 2.1FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 100 VIPP030N10N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-re

 9.7. Size:1541K  infineon
ipp039n10n5.pdf

IPP032N06N3
IPP032N06N3

IPP039N10N5MOSFETTO-220-3OptiMOS5 Power-Transistor, 100 VtabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target applications Halogen-free

 9.8. Size:575K  infineon
ipp030n10n3g.pdf

IPP032N06N3
IPP032N06N3

$$ " " $ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1 D Q ' 381>>5?B=1

 9.9. Size:726K  infineon
ipp034n03l .pdf

IPP032N06N3
IPP032N06N3

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.10. Size:536K  infineon
ipi030n10n3g ipp030n10n3g ipp030n10n3g ipi030n10n3g.pdf

IPP032N06N3
IPP032N06N3

IPP030N10N3 G IPI030N10N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesVDS 100 V N-channel, normal levelRDS(on),max 3mW Excellent gate charge x R product (FOM)DS(on)ID 100 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Ideal for h

 9.11. Size:725K  infineon
ipp034n03lg ipb034n03lg.pdf

IPP032N06N3
IPP032N06N3

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.12. Size:837K  infineon
ipp034ne7n3g ipi034ne7n3g.pdf

IPP032N06N3
IPP032N06N3

## ! ! # ! ! TM #:A0 4 m D n) m xQ #4513I CG9D389>7 1>4 3?>F5BD5BC 1 DQ H35

 9.13. Size:1806K  infineon
ipp034n08n5.pdf

IPP032N06N3
IPP032N06N3

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOS5 Power-Transistor, 80 VIPP034N08N5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOS5 Power-Transistor, 80 VIPP034N08N5TO-220-31 DescriptiontabFeatures Ideal for high frequency switching and sync. rec. Excellent gate charge x R product (FOM)DS(on) Very low on-resis

 9.14. Size:494K  infineon
ipp037n08n3g ipi037n08n3g ipb035n08n3g.pdf

IPP032N06N3
IPP032N06N3

IPP037N08N3 G IPI037N08N3 GIPB035N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS Ideal for high frequency switching and sync. rec.R 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) N-channel, normal level 100% avalanche tested

 9.15. Size:723K  infineon
ipb034n03l ipp034n03l.pdf

IPP032N06N3
IPP032N06N3

Type IPP034N03L GIPB034N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 3.4mWDS(on),max Optimized technology for DC/DC convertersI 80 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

 9.16. Size:246K  inchange semiconductor
ipp034n03l.pdf

IPP032N06N3
IPP032N06N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP034N03LIIPP034N03LFEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement mode:Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

 9.17. Size:246K  inchange semiconductor
ipp037n06l3.pdf

IPP032N06N3
IPP032N06N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP037N06L3IIPP037N06L3FEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

 9.18. Size:245K  inchange semiconductor
ipp030n10n5.pdf

IPP032N06N3
IPP032N06N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP030N10N5IIPP030N10N5FEATURESStatic drain-source on-resistance:RDS(on) 3.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

 9.19. Size:246K  inchange semiconductor
ipp039n10n5.pdf

IPP032N06N3
IPP032N06N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP039N10N5IIPP039N10N5FEATURESStatic drain-source on-resistance:RDS(on) 3.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

 9.20. Size:245K  inchange semiconductor
ipp030n10n3.pdf

IPP032N06N3
IPP032N06N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP030N10N3IIPP030N10N3FEATURESStatic drain-source on-resistance:RDS(on) 3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE M

 9.21. Size:246K  inchange semiconductor
ipp037n08n3.pdf

IPP032N06N3
IPP032N06N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP037N08N3IIPP037N08N3FEATURESStatic drain-source on-resistance:RDS(on) 3.75mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUT

 9.22. Size:246K  inchange semiconductor
ipp034n08n5.pdf

IPP032N06N3
IPP032N06N3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPP034N08N5IIPP034N08N5FEATURESStatic drain-source on-resistance:RDS(on) 3.4mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE

 9.23. Size:246K  inchange semiconductor
ipp039n04l.pdf

IPP032N06N3
IPP032N06N3

isc N-Channel MOSFET Transistor IPP039N04L,IIPP039N04LFEATURESStatic drain-source on-resistance:RDS(on) 3.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switching for SMPSOptimized technology for DC/DC convertersABSOLUTE MAXIMUM RATINGS(T

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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