IPP040N06N3 - описание и поиск аналогов

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP040N06N3 IIPP040N06N3 FEATURES Static drain-source on-resistance RDS(on) 3.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE M

Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS R 3.7 for sync. rectification, drives and dc/dc SMPS m DS(on),max (SMD) I 90 A Excellent gate charge x R product (FOM) D DS(on) previous engineering Very low on-resistance R DS(on) sample codes N-channel, normal level IPP04xN06N IPI04xN06N Ava

IPP040N06N3 G MOSFET TO-220-3 OptiMOS 3 Power-Transistor, 60 V tab Features for sync. rectification, drives and dc/dc SMPS Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) N-channel, normal level Avalanche rated Qualified according to JEDEC1) for target applications Pb-free plating; RoHS compliant Halogen-free accordi

Type IPP040N06N OptiMOSTM Power-Transistor Features Product Summary Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V 100% avalanche tested RDS(on),max 4.0 mW Superior thermal resistance ID 80 A N-channel QOSS nC 44 Qualified according to JEDEC1) for target applications QG(0V..10V) nC 38 Pb-free lead plating; RoHS compliant Hal

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP040N06N IIPP040N06N FEATURES Static drain-source on-resistance RDS(on) 4.0m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAX