IRFP4127PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 200V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m Hard Switched and High Frequency Circuits G 21mmax SID 75A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4127IIRFP4127FEATURESStatic drain-source on-resistance:RDS(on)21mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power

PD - 97311IRFP4110PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply VDSS 100Vl High Speed Power SwitchingRDS(on) typ.3.7m:l Hard Switched and High Frequency Circuitsmax.4.5m:ID (Silicon Limited)180A cID (Package Limited)120ABenefitsl Improved Gate, Avalanche and Dynamic dv/dtRuggednessDl

IRFP4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS DVDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69mmax SID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V DUltra Low On-Resistance RDS(on) typ. 3.7mEnhanced dV/dT and dI/dT capability 4.5mmax 175C Operating Temperature GID (Silicon Limited) 180A Fast Switching SRepetitive Avalanche Allowed up to Tjmax ID (Package Lim

IRFP4110N-Channel Enhancement Mode MOSFETElectrical Characteristics(TC=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitsOff CharacteristicsDrain-Sourtce Breakdown Voltage VGS=0V,ID=250A 100 --- --- VBVDSSZero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 AIDSSGate-Source Leakage CurrentIGSS VGS=20V, VDS=0A --- --- 100 nAOn Chara

isc N-Channel MOSFET Transistor IRFP4137IIRFP4137FEATURESStatic drain-source on-resistance:RDS(on)69mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Speed Power SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 300 V

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4110IIRFP4110FEATURESStatic drain-source on-resistance:RDS(on)4.5mEnhancement mode:Vth =2.0 to 4.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterr