IRFP4868 - описание и поиск аналогов

IRFP4868PbF VDSS 300V D RDS(on) typ. 25.5m max. 32m S ID 70A D G Applications TO-247AC High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching G D S Hard Switched and High Frequency Circuits Gate Drain Source Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fu

IRFP4868PbF VDSS 300V D RDS(on) typ. 25.5m max. 32m S ID 70A D G Applications TO-247AC High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching G D S Hard Switched and High Frequency Circuits Gate Drain Source Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4868 IIRFP4868 FEATURES Static drain-source on-resistance RDS(on) 32m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dr

PD -96175 IRFP4568PbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 4.8m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 5.9m S ID (Silicon Limited) 171 Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacit

PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche

PD -91884 SMPS MOSFET IRFP450A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

PD - 97106 IRFP4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m RDS(on) typ. Benefits max. 15.5m l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

PD - 94902 IRFP460LCPbF Lead-Free 12/19/03 Document Number 91235 www.vishay.com 1 IRFP460LCPbF Document Number 91235 www.vishay.com 2 IRFP460LCPbF Document Number 91235 www.vishay.com 3 IRFP460LCPbF Document Number 91235 www.vishay.com 4 IRFP460LCPbF Document Number 91235 www.vishay.com 5 IRFP460LCPbF Document Number 91235 www.vishay.com 6 IRFP460LCPbF Docu

PD - 94901 IRFP460PbF Lead-Free 12/19/03 Document Number 91237 www.vishay.com 1 IRFP460PbF Document Number 91237 www.vishay.com 2 IRFP460PbF Document Number 91237 www.vishay.com 3 IRFP460PbF Document Number 91237 www.vishay.com 4 IRFP460PbF Document Number 91237 www.vishay.com 5 IRFP460PbF Document Number 91237 www.vishay.com 6 IRFP460PbF TO-247AC Package O

PD - 96407A AUTOMOTIVE GRADE AUIRFP4004 HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V D Low On-Resistance RDS(on) typ. 1.35m 175 C Operating Temperature max. 1.70m Fast Switching G ID (Silicon Limited) 350A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 195A S Automotive Qualified * Description D S

IRFP4127PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS D VDSS 200V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m Hard Switched and High Frequency Circuits G 21m max S ID 75A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

PD - 94899 IRFP448PbF Lead-Free 12/18/03 Document Number 91229 www.vishay.com 1 IRFP448PbF Document Number 91229 www.vishay.com 2 IRFP448PbF Document Number 91229 www.vishay.com 3 IRFP448PbF Document Number 91229 www.vishay.com 4 IRFP448PbF Document Number 91229 www.vishay.com 5 IRFP448PbF Document Number 91229 www.vishay.com 6 IRFP448PbF TO-247AC Package O

PD -97134 IRFP4468PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m l Uninterruptible Power Supply l High Speed Power Switching max. 2.6m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 290A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ru

AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS 150V l 175 C Operating Temperature RDS(on) typ.4.8m l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 5.9m l Lead-Free, RoHS Compliant S ID 171A l Automotive Qualified * D Description D Specif

PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

PD - 97323 IRFP4004PbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 40V l High Speed Power Switching RDS(on) typ. 1.35m l Hard Switched and High Frequency Circuits max. 1.70m G ID (Silicon Limited) 350A c S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rug

PD- 94853 SMPS MOSFET IRFP460APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanc

PD - 96965A IRFP4232PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 250 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 300 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applications EPULSE typ. 310 J l Low QG for fast response IRP max @ TC= 100 C l

PD - 96966B IRFP4242PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 300 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 360 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 49 dissipation in Sustain & ER applications IRP max @ TC= 100 C 93 A l Low QG for fast response TJ max l High re

PD - 94361 IRFP4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014 72A Motor Control Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC Fully Characterized Avalanche Volta

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 C and Pass Switch Applications l Low QG for

PD - 97123A IRFP4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

PD-94011A SMPS MOSFET IRFP460AS HEXFET Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third

PD - 97079B IRFP4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 87 A and Pass Switch Applications

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

PD-94098 SMPS MOSFET IRFP460N HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

PD - 97311 IRFP4110PbF Applications HEXFET Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m l Hard Switched and High Frequency Circuits max. 4.5m ID (Silicon Limited) 180A c ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l

PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100 C 170 A Dissipation in PDP Sustain, Energy TJ max 175 C Recovery and Pass

PD - 94852 IRFP450PbF Lead-Free www.irf.com 1 11/17/03 IRFP450PbF 2 www.irf.com IRFP450PbF www.irf.com 3 IRFP450PbF 4 www.irf.com IRFP450PbF www.irf.com 5 IRFP450PbF 6 www.irf.com IRFP450PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2

PD-94809 SMPS MOSFET IRFP460NPbF HEXFET Power MOSFET Applications Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID Uninterruptable Power Supply 500V 0.24 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Character

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27 G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFET s from International Rectifier provide the designer with the best combination of f

PD - 97070A IRFP4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100 C 130 A and Pass Switch Applications

PD - 95055 IRFP4710PbF HEXFET Power MOSFET AppIications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 0.014 72A l Motor Control l Uninterruptible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC l Fully Charact

PD - 94852 IRFP450PbF Lead-Free 11/17/03 Document Number 91233 www.vishay.com 1 IRFP450PbF Document Number 91233 www.vishay.com 2 IRFP450PbF Document Number 91233 www.vishay.com 3 IRFP450PbF Document Number 91233 www.vishay.com 4 IRFP450PbF Document Number 91233 www.vishay.com 5 IRFP450PbF Document Number 91233 www.vishay.com 6 IRFP450PbF TO-247AC Package O

IRFP4137PbF HEXFET Power MOSFET Application High Efficiency Synchronous Rectification in SMPS D VDSS 300V Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m Hard Switched and High Frequency Circuits G 69m max S ID 38A Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Chara

PD - 97309A IRFP4410ZPbF HEXFET Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

PD -97140 IRFP4668PbF HEXFET Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 8.0m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 9.7m ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterized Capacitance an

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 1.46m l Hard Switched and High Frequency Circuits max. 1.85m G ID (Silicon Limited) 350Ac S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rugge

PD - 95198 IRFP440PbF Lead-Free 4/27/04 Document Number 91228 www.vishay.com 1 IRFP440PbF Document Number 91228 www.vishay.com 2 IRFP440PbF Document Number 91228 www.vishay.com 3 IRFP440PbF Document Number 91228 www.vishay.com 4 IRFP440PbF Document Number 91228 www.vishay.com 5 IRFP440PbF Document Number 91228 www.vishay.com 6 IRFP440PbF TO-247AC Package Ou

PD- 94216 SMPS MOSFET IRFP450N HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37 14A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Cur

PD -95054 SMPS MOSFET IRFP450APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala

PD- 91880 SMPS MOSFET IRFP460A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175 C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Autom

PD - 97379 IRFP4768PbF HEXFET Power MOSFET D Applications VDSS 250V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 14.5m l High Speed Power Switching G max. 17.5m l Hard Switched and High Frequency Circuits ID 93A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance

IRFP460 N - CHANNEL 500V - 0.22 - 20 A - TO-247 PowerMESH MOSFET TYPE VDSS RDS(on) ID IRFP460 500 V

IRFP450 N-CHANNEL 500V - 0.31 - 14A TO-247 PowerMesh II MOSFET TYPE VDSS RDS(on) ID IRFP450 500V

February 2002 IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 130nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to

November 2001 IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 14A, 500V, RDS(on) = 0.39 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 87 nC) planar, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast s

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.308 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.638 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 29 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements D Le

IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RoHS RDS(on) (Max.) ( )VGS = 10 V 0.37 Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Ruggedness Qg (Max.) (nC) 77 Fully Characterized Capacitance and Qgs (nC) 26 Avalanche Voltage and Current Qgd (nC) 34 Effect

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.85 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 63 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Lead (Pb

IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 Isolated Central Mounting Hole Qgd (nC) 35 Dynamic dV/dt Rated Configuration

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configura

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Compli

IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.25 - Low Input Capacitance (Ciss) Qg max. (nC) 170 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 28 - Avalanche Energy Rate

IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ( )VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 105 COMPLIANT Ruggedness Qgs (nC) 26 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 42 and Current Configurat

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.85 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Complian

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configu

IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 150 COMPLIANT Fast Switching Qgs (nC) 20 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Lead (P

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Lead

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuratio

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.27 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 29 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements D Le

IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 Isolated Central Mounting Hole Qgd (nC) 35 Dynamic dV/dt Rated Configuration

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Compli

AUIRFP4568 AUTOMOTIVE GRADE AUIRFP4568-E Features VDSS 150V Advanced Planar Technology RDS(on) typ. 4.8m Ultra Low On-Resistance Dynamic dv/dt Rating max. 5.9m 175 C Operating Temperature ID 171A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description S

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configu

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuratio

AUTOMOTIVE GRADE AUIRFP4110 HEXFET Power MOSFET Features Advanced Process Technology VDSS 100V D Ultra Low On-Resistance RDS(on) typ. 3.7m Enhanced dV/dT and dI/dT capability 4.5m max 175 C Operating Temperature G ID (Silicon Limited) 180A Fast Switching S Repetitive Avalanche Allowed up to Tjmax ID (Package Lim

MegaMOSTM IRFP 460 VDSS = 500 V Power MOSFET ID(cont) = 20 A RDS(on) = 0.27 N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C20 A G = Gate, D = Drain, IDM TC = 25 C, pulse wi

IRFP 470 VDSS = 500 V MegaMOSTMFET ID (cont) = 24 A RDS(on) = 0.23 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C24 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by TJM 96 A

IRFP 450 VDSS = 500 V Standard Power MOSFET ID(cont) = 14 A RDS(on) = 0.40 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 500 V VDGR TJ = 25 C to 150 C; RGS = 1 M 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C14 A G = Gate, D = Drain, IDM TC = 25 C, pulse width limited by

IRFP460, S E M I C O N D U C T O R IRFP462 20A and 17A, 500V, 0.27 and 0.35 Ohm, January 1998 N-Channel Power MOSFETs Features Description 20A and 17A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power rDS(ON) = 0.27 and 0.35 MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in t

IRFP4468 Thunder High Power Products Silicon N-Channel Power MOSFET FEATURES Static drain-source on-resistance RDS(on) 2.6m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible

IRFP4110 N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics Drain-Sourtce Breakdown Voltage VGS=0V,ID=250 A 100 --- --- V BVDSS Zero Gate Voltage Drain Current VGS=0V, VDS=100V --- --- 1 A IDSS Gate-Source Leakage Current IGSS VGS= 20V, VDS=0A --- --- 100 nA On Chara

IRFP460PBF www.VBsemi.tw N-Channel 500V(D-S) Super Junction Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.080 Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 350 Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current

Silicon N-Channel Power MOSFET Description IRFP460 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =500V, R

Silicon N-Channel Power MOSFET Description The IRFP450 uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features V =500V, R

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4568PBF FEATURES With TO-247packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

isc N-Channel MOSFET Transistor IRFP460B FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.25 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4468 IIRFP4468 FEATURES Static drain-source on-resistance RDS(on) 2.6m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterr

isc N-Channel MOSFET Transistor IRFP453 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

isc N-Channel MOSFET Transistor IRFP452 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.27 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4332 IIRFP4332 FEATURES Static drain-source on-resistance RDS(on) 33m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Swi

isc N-Channel MOSFET Transistor IRFP4568 IIRFP4568 FEATURES Static drain-source on-resistance RDS(on) 5.9m Enhancement mode Vth =3.0 to 5.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460APBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4321 IIRFP4321 FEATURES Static drain-source on-resistance RDS(on) 15.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Motion Control Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4710 IIRFP4710 FEATURES Static drain-source on-resistance RDS(on) 14m Enhancement mode Vth =3.5 to 5.5 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency DC-DC Converters Uninterruptible Power Suppl

isc N-Channel MOSFET Transistor IRFP4137 IIRFP4137 FEATURES Static drain-source on-resistance RDS(on) 69m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 300 V

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4368 IIRFP4368 FEATURES Static drain-source on-resistance RDS(on) 1.85m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninter

isc N-Channel MOSFET Transistor IRFP442R FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

isc N-Channel MOSFET Transistor IRFP470 FEATURES With TO-247 packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

isc N-Channel MOSFET Transistor IRFP4229 IIRFP4229 FEATURES Static drain-source on-resistance RDS(on) 46m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Switching ABSOLUTE MAXIM

isc N-Channel MOSFET Transistor IRFP440A FEATURES Drain Current I = 8.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplie

isc N-Channel MOSFET Transistor IRFP443R FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

isc N-Channel MOSFET Transistor IRFP4410Z IIRFP4410Z FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4110 IIRFP4110 FEATURES Static drain-source on-resistance RDS(on) 4.5m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterr

isc N-Channel MOSFET Transistor IRFP451 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

isc N-Channel MOSFET Transistor IRFP462 FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.35 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

isc N-Channel MOSFET Transistor IRFP4768 IIRFP4768 FEATURES Static drain-source on-resistance RDS(on) 17.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Swit

isc N-Channel MOSFET Transistor IRFP4227 IIRFP4227 FEATURES Static drain-source on-resistance RDS(on) 21m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Switching ABSOLUTE MAXIM

isc N-Channel MOSFET Transistor IRFP4668 IIRFP4668 FEATURES Static drain-source on-resistance RDS(on) 9.7m Enhancement mode Vth =3.0 to 5.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply

isc N-Channel MOSFET Transistor IRFP441R FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4227PBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 )

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4127 IIRFP4127 FEATURES Static drain-source on-resistance RDS(on) 21m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP450 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in swit

isc P-Channel MOSFET Transistor IRFP4905 FEATURES Drain Current I = -70A@ T =25 D C Drain Source Voltage- V = -55V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z IIRFP4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Unin

isc N-Channel MOSFET Transistor IRFP4004 IIRFP4004 FEATURES Static drain-source on-resistance RDS(on) 1.7m Enhancement mode Vth =2.0 to 4.0V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply H

isc N-Channel MOSFET Transistor IRFP450R FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

isc N-Channel MOSFET Transistor IRFP440R FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies