TK10A60D5 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: TK10A60D5
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 135 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.05 Ohm
Тип корпуса: TO-220F
TK10A60D5 Datasheet (PDF)
tk10a60d5.pdf
TK10A60D5MOSFETs Silicon N-Channel MOS (-MOS)TK10A60D5TK10A60D5TK10A60D5TK10A60D51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.8 (typ.)(3) High f
tk10a60d5.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60D5ITK10A60D5FEATURESLow drain-source on-resistance:RDS(on) = 0.8 (typ.)Enhancement mode:Vth = 2.5 to 4.5V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATING
tk10a60d.pdf
TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOS VII) TK10A60D Unit: mmSwitching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) A
tk10a60d.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60DITK10A60DFEATURESLow drain-source on-resistance:RDS(ON) = 0.58 (typ.)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS
tk10a60w.pdf
TK10A60WMOSFETs Silicon N-Channel MOS (DTMOS)TK10A60WTK10A60WTK10A60WTK10A60W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.327 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E
tk10a60w5.pdf
TK10A60W5MOSFETs Silicon N-Channel MOS (DTMOS)TK10A60W5TK10A60W5TK10A60W5TK10A60W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 85 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.35 (typ.) by used to Super Junction Stru
tk10a60w.pdf
INCHANGE SemiconductoriscN-Channel MOSFET Transistor TK10A60W, ITK10A60WFEATURESLow drain-source on-resistance: RDS(ON) = 0.38Easy to control Gate switchingEnhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators
tk10a60w5.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor TK10A60W5, lTK10A60W5FEATURESLow drain-source on-resistance: RDS(ON) = 0.45Easy to control Gate switchingEnhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=0.5 mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage Regulators
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918