SFW9520 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SFW9520
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 49 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 175 °C
Qgⓘ - Общий заряд затвора: 16 nC
trⓘ - Время нарастания: 21 ns
Cossⓘ - Выходная емкость: 90 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
Тип корпуса: TO263
SFW9520 Datasheet (PDF)
sfw9520 sfi9520.pdf
SFW/I9520Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.6 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -6.0 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.444 (Typ.)112331. Gat
sfw9520.pdf
Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.6 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.0 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 (Typ.)112331. Gate 2. Drain 3. SourceAbsolu
sfi9510 sfw9510.pdf
SFW/I9510Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 1.2n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -3.6 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.912 (Typ.)112331. Gate
sfw9530tm.pdf
SFW/I9530Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.3 n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -10.5 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.225 (Typ.)112331. Ga
sfw9540.pdf
SFW/I9540Advanced Power MOSFETFEATURESBVDSS = -100 Vn Avalanche Rugged TechnologyRDS(on) = 0.2n Rugged Gate Oxide Technology n Lower Input CapacitanceID = -17 An Improved Gate Chargen Extended Safe Operating AreaD2-PAK I2-PAKn 175oC Operating Temperature2n Lower Leakage Current : 10 A(Max.) @ VDS = -100Vn Low RDS(ON) : 0.161 (Typ.)112331. Gat
sfw9530.pdf
Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = -10.5 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 (Typ.)112331. Gate 2. Drain 3. SourceAbsol
sfw9540.pdf
Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -17 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 (Typ.)112331. Gate 2. Drain 3. SourceAbsolut
sfw9510.pdf
Advanced Power MOSFETFEATURESBVDSS = -100 V Avalanche Rugged TechnologyRDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = -3.6 A Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.912 (Typ.)112331. Gate 2. Drain 3. SourceAbsolu
Другие MOSFET... SFU9130 , SFU9210 , SFU9214 , SFU9220 , SFU9224 , SFU9310 , SFW2955 , SFW9510 , 2SK3878 , SFW9530 , SFW9540 , SFW9610 , SFW9614 , SFW9620 , SFW9624 , SFW9630 , SFW9634 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918