BSC014N04LSI MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSC014N04LSI
Маркировка: 014N04LI
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 31 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 29 nC
trⓘ - Время нарастания: 50 ns
Cossⓘ - Выходная емкость: 1200 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.00145 Ohm
Тип корпуса: PG-TDSON-8
Аналог (замена) для BSC014N04LSI
BSC014N04LSI Datasheet (PDF)
bsc014n04lsi.pdf
BSC014N04LSIOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.45 mW Integrated monolithic Schottky-like diodeA ID 100 Very low on-resistance RDS(on)QOSS 53 nC 100% avalanche tested55 nC QG(0V..10V) N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target a
bsc014n04ls.pdf
BSC014N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for synchronous rectificationRDS(on),max 1.4 mW Very low on-state resistance RDS(on)ID 100 A 100% avalanche testedQoss 54 nC Superior thermal resistanceQg(0V..10V) 61 nC N-channel, logic levelPG-TDSON-8 FL Qualified according to JEDEC1) for target applications(
bsc014n06nssc.pdf
BSC014N06NSSCMOSFETPG-WSON-8-2OptiMOSTM Power-Transistor, 60 VFeatures Double side cooled package-with lowest Junction-top thermal resistancetab 175C rated Optimized for high performance SMPS, e.g. sync. rec.56 100% avalanche tested78 Superior thermal resistance43 N-channel21 Pb-free lead plating; RoHS compliant Halogen-free ac
bsc014n06ns.pdf
TypeBSC014N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 1.45 mW Superior thermal resistanceID 100 A N-channelQOSS nC 100 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 89 Pb-free lead plating; RoHS compliantPG-
bsc014n03ls .pdf
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bsc014n03ls.pdf
BSC014N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.4mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc014n03lsg.pdf
BSC014N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 1.4mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel Logic level; Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc014n03msg.pdf
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bsc014n03ms.pdf
BSC014N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 1.4mDS(on),max GS Low FOMSW for High Frequency SMPSV =4.5 V 1.75GS 100% avalanche testedI 100 AD N-channelPG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R prod
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918