BSC022N04LS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSC022N04LS
Маркировка: 022N04LS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 19 nC
trⓘ - Время нарастания: 6.8 ns
Cossⓘ - Выходная емкость: 750 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
Тип корпуса: PG-TDSON-8
Аналог (замена) для BSC022N04LS
BSC022N04LS Datasheet (PDF)
bsc022n04ls.pdf
BSC022N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.2 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 33 nC Superior thermal resistanceQG(0V..10V) 37 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-
bsc022n04ls6.pdf
BSC022N04LS6MOSFETTDSON-8 FL (enlarged source interconnection)OptiMOSTM 6 Power-Transistor, 40 V876Features5 Optimized for synchronous application Very low on-resistance RDS(on)1 52 6 100% avalanche tested734 8 Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant3 Halogen-free according to IEC61249-2-21 2
bsc028n06ns.pdf
TypeBSC028N06NSOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.8 mW 100% avalanche testedID 100 A Superior thermal resistanceQoss 43 nC N-channelQG(0..10V) 37 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge
bsc020n03ls.pdf
BSC020N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
bsc026n08ns5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC026N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC026N08NS5SuperSO81 Description5867Features7685 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t
bsc025n03ms.pdf
BSC025N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryV 30 VFeatures DSR V =10 V 2.5mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 3GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (
bsc020n03ls .pdf
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bsc027n10ns5.pdf
BSC027N10NS5MOSFETTSON-8-3OptiMOSTM Power-Transistor, 100 V8756 6Features 758 Optimized for high performance SMPS, e.g. sync. rec.Pin 1 100% avalanche tested2433 Superior thermal resistance4 21 N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 175C ratedProduct Validation:Qualified fo
bsc026ne2ls5.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-MOSFET, 25 VBSC026NE2LS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-MOSFET, 25 VBSC026NE2LS5SuperSO81 Description5867Features7685 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 VDS(on) GS 100% ava
bsc025n03msg.pdf
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bsc027n06ls5.pdf
BSC027N06LS5MOSFETSuperSO8OptiMOSTM Power-Transistor, 60 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according to IEC61249-2-
bsc024ne2ls.pdf
n-Channel Power MOSFETOptiMOSBSC024NE2LS Data Sheet2.1, 2011-09-20Final Industrial & MultimarketOptiMOS Power-MOSFETBSC024NE2LS1 DescriptionOptiMOS25V products are class leading power MOSFETs for highest powerdensity and energy efficient solutions. Ultra low gate- and output charges togetherwith lowest on state resistance in small footprint packages make OptiMO
bsc020n03ms.pdf
BSC020N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 2mDS(on),max GSV =4.5 V 2.5 Low FOMSW for High Frequency SMPSGSI 100 AD 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product
bsc025n03ls.pdf
BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsc025n03lsg.pdf
BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsc020n03lsg.pdf
BSC020N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superio
bsc020n03msg.pdf
BSC020N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 2mDS(on),max GSV =4.5 V 2.5 Low FOMSW for High Frequency SMPSGSI 100 AD 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product
bsc025n03ls .pdf
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bsc028n06ls3 bsc028n06ls3g.pdf
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bsc027n04lsg.pdf
BSC027N04LS GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 2.7mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)
bsc026n04ls.pdf
BSC026N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 100 A 100% avalanche testedQOSS 28 nC Superior thermal resistanceQG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-
bsc025n08ls5.pdf
BSC025N08LS5MOSFETSuperSO8OptiMOSTM5 Power-Transistor, 80 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Qualified according to JEDEC1) for target applications132 2 Pb-free lead plating; RoHS compliant3 14 Halogen-free according
bsc021n08ns5.pdf
BSC021N08NS5MOSFETTSON-8-3OptiMOSTM5 Power-Transistor, 80 V8756 6Features 758 Optimized for Synchronous Rectification in server and desktopPin 1 100% avalanche tested2433 Superior thermal resistance4 21 N-channel 175C rated Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Product Validation:Qua
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918