BSC022N04LS datasheet, аналоги, основные параметры
Наименование производителя: BSC022N04LS 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 6.8 ns
Cossⓘ - Выходная емкость: 750 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
Тип корпуса: PG-TDSON-8
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Аналог (замена) для BSC022N04LS
- подборⓘ MOSFET транзистора по параметрам
BSC022N04LS даташит
..1. Size:586K infineon
bsc022n04ls.pdf 
BSC022N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.2 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 33 nC Superior thermal resistance QG(0V..10V) 37 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-
0.1. Size:1586K infineon
bsc022n04ls6.pdf 
BSC022N04LS6 MOSFET TDSON-8 FL (enlarged source interconnection) OptiMOSTM 6 Power-Transistor, 40 V 8 7 6 Features 5 Optimized for synchronous application Very low on-resistance R DS(on) 1 5 2 6 100% avalanche tested 7 3 4 8 Superior thermal resistance N-channel 4 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 2
9.1. Size:437K infineon
bsc028n06ns.pdf 
Type BSC028N06NS OptiMOSTM Power-Transistor Product Summary Features VDS 60 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.8 mW 100% avalanche tested ID 100 A Superior thermal resistance Qoss 43 nC N-channel QG(0..10V) 37 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge
9.2. Size:385K infineon
bsc020n03ls.pdf 
BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio
9.3. Size:1182K infineon
bsc026n08ns5.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-Transistor, 80 V BSC026N08NS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for Synchronous Rectification in server and desktop 100% avalanche tested Superior t
9.4. Size:194K infineon
bsc025n03ms.pdf 
BSC025N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary V 30 V Features DS R V =10 V 2.5 m DS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL) V =4.5 V 3 GS Low FOMSW for High Frequency SMPS I 100 A D 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product (
9.5. Size:679K infineon
bsc020n03ls .pdf 
& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @
9.6. Size:831K infineon
bsc027n10ns5.pdf 
BSC027N10NS5 MOSFET TSON-8-3 OptiMOSTM Power-Transistor, 100 V 8 7 5 6 6 Features 7 5 8 Optimized for high performance SMPS, e.g. sync. rec. Pin 1 100% avalanche tested 2 4 3 3 Superior thermal resistance 4 2 1 N-channel Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 175 C rated Product Validation Qualified fo
9.7. Size:1492K infineon
bsc026ne2ls5.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 25 V BSC026NE2LS5 Data Sheet Rev. 2.0 Final Power Management & Multimarket OptiMOSTM5 Power-MOSFET, 25 V BSC026NE2LS5 SuperSO8 1 Description 5 8 6 7 Features 7 6 8 5 Optimized for high performance buck converters Very low on-resistance R @ V =4.5 V DS(on) GS 100% ava
9.8. Size:542K infineon
bsc025n03msg.pdf 
% ! % D %0 G D ON S 07DK >AI A@ D7E;EF3@57 0 . A@ G S J57>>7@F 93F7 5 3D97 J BDA6G5F !* ( D n) 1) S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@E S .GB7D;AD F 7
9.10. Size:1333K infineon
bsc027n06ls5.pdf 
BSC027N06LS5 MOSFET SuperSO8 OptiMOSTM Power-Transistor, 60 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel 4 Qualified according to JEDEC1) for target applications 1 3 2 2 Pb-free lead plating; RoHS compliant 3 1 4 Halogen-free according to IEC61249-2-
9.11. Size:1625K infineon
bsc024ne2ls.pdf 
n-Channel Power MOSFET OptiMOS BSC024NE2LS Data Sheet 2.1, 2011-09-20 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC024NE2LS 1 Description OptiMOS 25V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate- and output charges together with lowest on state resistance in small footprint packages make OptiMO
9.12. Size:452K infineon
bsc020n03ms.pdf 
BSC020N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 2 m DS(on),max GS V =4.5 V 2.5 Low FOMSW for High Frequency SMPS GS I 100 A D 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product
9.13. Size:382K infineon
bsc025n03ls.pdf 
BSC025N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super
9.14. Size:384K infineon
bsc025n03lsg.pdf 
BSC025N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2.5 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Super
9.15. Size:387K infineon
bsc020n03lsg.pdf 
BSC020N03LS G OptiMOS 3 Power-MOSFET Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 2 m DS(on),max Optimized technology for DC/DC converters I 100 A D Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio
9.17. Size:456K infineon
bsc020n03msg.pdf 
BSC020N03MS G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V 30 V DS Optimized for 5V driver application (Notebook, VGA, POL) R V =10 V 2 m DS(on),max GS V =4.5 V 2.5 Low FOMSW for High Frequency SMPS GS I 100 A D 100% Avalanche tested PG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 V DS(on) GS Excellent gate charge x R product
9.18. Size:685K infineon
bsc025n03ls .pdf 
& " & E $;B1= !#& ' $=;0@/? &@99-=D Features D Q 2CD CG D49 ?8 ') - . 7@B -'*- m D n) m x Q ) AD > J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D 1) Q + E2= 7 65 244@B5 ?8 D@ $ 7@B D2B86D 2AA= 42D @?C G D ON Q ( 492??6= &@8 4 =6F6= Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n) Q /6BI =@G @? B6C CD2?46 D n) Q -EA6B @B D96B>2= B6C CD2?46 Q F2=2?496 B2D65 Q *3 7B66 A=2D ?8 , @
9.21. Size:586K infineon
bsc026n04ls.pdf 
BSC026N04LS OptiMOSTM Power-MOSFET Product Summary Features VDS 40 V Optimized for high performance SMPS, e.g. sync. rec. RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 28 nC Superior thermal resistance QG(0V..10V) 32 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-
9.22. Size:869K infineon
bsc025n08ls5.pdf 
BSC025N08LS5 MOSFET SuperSO8 OptiMOSTM5 Power-Transistor, 80 V 5 8 6 7 Features 7 6 8 5 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level 4 Qualified according to JEDEC1) for target applications 1 3 2 2 Pb-free lead plating; RoHS compliant 3 1 4 Halogen-free according
9.23. Size:1002K infineon
bsc021n08ns5.pdf 
BSC021N08NS5 MOSFET TSON-8-3 OptiMOSTM5 Power-Transistor, 80 V 8 7 5 6 6 Features 7 5 8 Optimized for Synchronous Rectification in server and desktop Pin 1 100% avalanche tested 2 4 3 3 Superior thermal resistance 4 2 1 N-channel 175 C rated Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Product Validation Qua
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