BSC025N03MS Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: BSC025N03MS
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 23 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 1600 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0025 Ohm
Тип корпуса: PG-TDSON-8
Аналог (замена) для BSC025N03MS
BSC025N03MS Datasheet (PDF)
bsc025n03ms.pdf

BSC025N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryV 30 VFeatures DSR V =10 V 2.5mDS(on),max GS Optimized for 5V driver application (Notebook, VGA, POL)V =4.5 V 3GS Low FOMSW for High Frequency SMPSI 100 AD 100% avalanche tested N-channel PG-TDSON-8 Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (
bsc025n03msg.pdf

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bsc025n03ls.pdf

BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
bsc025n03lsg.pdf

BSC025N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDS Fast switching MOSFET for SMPS R 2.5mDS(on),max Optimized technology for DC/DC converters I 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Super
Другие MOSFET... BSC016N06NS , BSC018NE2LSI , BSC019N02KS , BSC019N04LS , BSC020N03LS , BSC020N03MS , BSC022N04LS , BSC025N03LS , AO4407 , BSC026N02KS , BSC026N04LS , BSC026N08NS5 , BSC026NE2LS5 , BSC028N06NS , BSC030N03LS , BSC030N03MS , BSC030N08NS5 .
History: IRFSL4228PBF | HM1P15PR
History: IRFSL4228PBF | HM1P15PR



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