TypeBSC039N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 3.9 mW Superior thermal resistanceID 100 A N-channelQOSS nC 32 Qualified according to JEDEC1) for target applicationsQG(0V..10V) nC 27 Pb-free lead plating; RoHS compliant H

& " & E $;B1= !#& '$=;0@/? &@99-=DFeatures D m Q 2CD CG:D49:?8 ') - . 7@B -'*- D n) m x 1 DQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC1) G D ON Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?CQ ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?8 , @

BSC030N04NS GOptiMOS3 Power-Transistor Product SummaryV 40 VFeatures DSR 3.0m Fast switching MOSFET for SMPS DS(on),maxI 100 A Optimized technology for DC/DC converters D Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Normal level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) S

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM 5 Power-Transistor, 100 VBSC035N10NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM 5 Power-Transistor, 100 VBSC035N10NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior therma

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC030N08NS5Data SheetRev. 2.2FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC030N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

BSC030N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDSR 3m Fast switching MOSFET for SMPS DS(on),maxI 100 AD Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOSTMOptiMOSTM5 Power-Transistor, 80 VBSC037N08NS5Data SheetRev. 2.0FinalPower Management & MultimarketOptiMOSTM5 Power-Transistor, 80 VBSC037N08NS5SuperSO81 Description5867Features7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal re

& $ "& '! $ $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures VDSQ C:?8=6 ) 92??6= :? ,EA6B,( .0 m DS(on) max1)Q * E2=:7:65 244@B5:?8 $ 7@B D2B86D 2AA=:42D:@?C 100 ADQ . CA64:2==I CE:D65 7@B ?@D63@@A=:2?DQ , 2?286>6?D =@25 CG:D49:?8Q "2=@86? 7B66 244@B5:?8 D@ # Type Package Marking 1

BSC034N03LS GOptiMOS3 Power-MOSFETProduct Summary Features VDS 30 V Fast switching MOSFET for SMPSRDS(on),max 3.4 mW Optimized technology for DC/DC convertersID 100 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Sup

TypeBSC034N06NSOptiMOSTM Power-TransistorFeaturesProduct Summary Optimized for high performance SMPS, e.g. sync. rec.VDS 60 V 100% avalanche testedRDS(on),max 3.4 mW Superior thermal resistanceID 100 A N-channelQOSS nC 37 Qualified according to JEDEC1) for target applicationsQG(0V..10V) 33 nC Pb-free lead plating; RoHS compliant Hal

BSC030N03MS GOptiMOS3 M-Series Power-MOSFETProduct SummaryFeaturesV 30 VDS Optimized for 5V driver application (Notebook, VGA, POL)R V =10 V 3mDS(on),max GS Low FOMSW for High Frequency SMPS V =4.5 V 3.8GSI 100 A 100% avalanche tested DPG-TDSON-8 N-channel Very low on-resistance RDS(on) @ VGS=4.5V Excellent gate charge x RDS(on) product

% ! % D %0S 07DK >AI A@ D7E;EF3@57 - . A@ 0G =4 S J57>>7@F 93F7 5:3D97 J - . A@ BDA6G5F !* ( 1)S , G3>;8;76 355AD6;@9 FA % 8AD F3D97F 3BB>;53F;A@ES .GB7D;AD

% ! % D #:A0

BSC034N03LS GOptiMOS3 Power-MOSFETProduct Summary Features VDS 30 V Fast switching MOSFET for SMPSRDS(on),max 3.4 mW Optimized technology for DC/DC convertersID 100 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Sup

BSC037N08NS5TMOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 80 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. rec. 100% avalanche tested Superior thermal resistance N-channel4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified according to JEDE

BSC032NE2LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 25 V Optimized for high performance Buck converter RDS(on),max 3.2 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 84 A 100% avalanche testedQOSS 9.4 nC Superior thermal resistanceQG(0V..10V) 16 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8

BSC032N04LSOptiMOSTM Power-MOSFETProduct Summary FeaturesVDS 40 V Optimized for high performance SMPS, e.g. sync. rec.RDS(on),max 3.2 mW Very low on-resistance R @ V =4.5 VDS(on) GSID 98 A 100% avalanche testedQOSS 22 nC Superior thermal resistanceQG(0V..10V) 25 nC N-channel Qualified according to JEDEC1) for target applicationsPG-TDSON-8

BSC030N03LS GOptiMOS3 Power-MOSFETProduct SummaryFeatures V 30 VDSR 3m Fast switching MOSFET for SMPS DS(on),maxI 100 AD Optimized technology for DC/DC convertersPG-TDSON-8 Qualified according to JEDEC1) for target applications N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi

pe $ $ TM "9@/; %;+877+;BFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 1m D n) m xQ ( @D9=9J54 D538>?F5BD5BCI 1 DQ H35

BSC034N10LS5MOSFETSuperSO8OptiMOSTM 5 Power-Transistor, 100 V5867Features 7685 Optimized for high performance SMPS, e.g. sync. Rec. 100% avalanche tested Superior thermal resistance N-channel, logic level4 Pb-free lead plating; RoHS compliant132 2 Halogen-free according to IEC61249-2-213 14Product validationFully qualified acco

BSC035N04LS GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 40 VDS Fast switching MOSFET for SMPSR 3.5mDS(on),max Optimized technology for DC/DC convertersI 100 AD Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

BSC036NE7NS3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 75 V Optimized technology for synchronous rectificationRDS(on),max 3.6mW Ideal for high frequency switching and DC/DC convertersID 100 A Excellent gate charge x R product (FOM)DS(on) Superior thermal resistance N-channel, normal level 100% avalanche tested Pb-free plating; RoHS

& " & E $;B1= !#& '$=;0@/? &@99-=D 1-?@=1> D Q 2CD CG:D49:?8 ') - . 7@B -'*- 4m D n) m xQ ) AD:>:J65 D649?@=@8I 7@B 4@?F6BD6BC 1 D1)Q + E2=:7:65 244@B5:?8 D@ $ 7@B D2B86D 2AA=:42D:@?C G D ON Q ( 492??6= &@8:4 =6F6=Q H46==6?D 82D6 492B86 H AB@5E4D ) ' D n)Q /6BI =@G @? B6C:CD2?46 D n)Q -EA6B:@B D96B>2= B6C:CD2?46Q F2=2?496 B2D65Q *3 7B66 A=2D:?