BSC120N03MS MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSC120N03MS
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 11 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 4.4 ns
Cossⓘ - Выходная емкость: 390 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
Тип корпуса: PG-TDSON-8
Аналог (замена) для BSC120N03MS
BSC120N03MS Datasheet (PDF)
bsc120n03ms.pdf
BSC120N03MS GOptiMOS3 M-Series Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL)VGS=4.5 V 14 Low FOMSW for High Frequency SMPSID 39 A 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)
bsc120n03msg.pdf
BSC120N03MS GOptiMOS3 M-Series Power-MOSFET Product Summary VDS 30 V FeaturesRDS(on),max VGS=10 V 12 mW Optimized for 5V driver application (Notebook, VGA, POL)VGS=4.5 V 14 Low FOMSW for High Frequency SMPSID 39 A 100% Avalanche testedPG-TDSON-8 N-channel Very low on-resistance R @ V =4.5 VDS(on) GS Excellent gate charge x R product (FOM)
bsc120n03msg7.pdf
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bsc120n03lsg.pdf
BSC120N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 12 mW Optimized technology for DC/DC convertersID 39 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi
bsc120n03ls .pdf
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bsc120n03ls.pdf
BSC120N03LS GOptiMOS3 Power-MOSFETProduct Summary FeaturesVDS 30 V Fast switching MOSFET for SMPSRDS(on),max 12 mW Optimized technology for DC/DC convertersID 39 A Qualified according to JEDEC1) for target applicationsPG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on) Superi
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918