SI4435DY MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SI4435DY
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1(min) V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 40 nC
Время нарастания (tr): 76 ns
Выходная емкость (Cd): 390 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.02 Ohm
Тип корпуса: SO8
SI4435DY Datasheet (PDF)
si4435dy.pdf
PD- 93768ASi4435DYHEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon
si4435dy.pdf
October 2001 SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8.8 A, 30 V R = 20 m @ V = 10 V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 35 m @ V = 4.5 V DS(ON) GSprocess. It has been optimized for power management applications requiring a wide range of gave
si4435dy.pdf
Si4435DYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD Lead (Pb)-Free Version is RoHSVDS (V) rDS(on) (W) ID (A)Compliant0.02 @ VGS = 10 V 8.030300.035 @ VGS = 4.5 V 6.0SSO-8SD1 8GS D2 7SD3 6G D4 5DTop ViewP-Channel MOSFETOrdering Information: Si4435DY-T1REV ASi4435DY-T1AE3 (Lead (Pb)-Free)ABSOLU
si4435dypbf si4435dytrpbf.pdf
PD- 95133Si4435DYPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resis
si4435dypbf.pdf
PD- 95133Si4435DYPbFHEXFET Power MOSFETl Ultra Low On-ResistanceA1 8S Dl P-Channel MOSFETVDSS = -30V2 7l Surface MountS Dl Available in Tape & Reel3 6S Dl Lead-Free4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resis
si4435dy.pdf
SMD Type MOSFETSMD TypeP-Channel MOSFETSI4435DY (KI4435DY)SOP-8 Features VDS=-30V RDS(on)=0.02@VGS=-10V1.50 0.15 RDS(on)=0.035@VGS=-4.5VSS D1 8GS D2 7S D3 6G D4 5DTop View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VContinuous Drain Current ID
si4435dy ki4435dy.pdf
SMD Type MOSFETSMD TypeP-Channel MOSFETSI4435DY (KI4435DY)SOP-8 Features VDS=-30V RDS(on)=0.02@VGS=-10V1.50 0.15 RDS(on)=0.035@VGS=-4.5VSS D1 8GS D2 7S D3 6G D4 5DTop View Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-Source Voltage VDS -30 VGate-Source Voltage VGS 20 VContinuous Drain Current ID
si4435dytr.pdf
PD- 93768ASi4435DYHEXFET Power MOSFET Ultra Low On-ResistanceA1 8S D P-Channel MOSFETVDSS = -30V2 7 Surface MountS D Available in Tape & Reel3 6S D4 5G DRDS(on) = 0.020Top ViewDescriptionThese P-channel HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve the extremely low on-resistance persilicon
si4435dy-t1-e3.pdf
SI4435DY-T1-E3www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3
si4435ddy.pdf
New ProductSi4435DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET0.024 at VGS = - 10 V - 11.4- 30 15 nC Compliant to RoHS Directive 2002/95/EC0.035 at VGS = - 4.5 V - 9.4APPLICATIONS Load Switches Battery Swit
si4435dd.pdf
New ProductSi4435DDYVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.) Definition TrenchFET Power MOSFET0.024 at VGS = - 10 V - 11.4- 30 15 nC Compliant to RoHS Directive 2002/95/EC0.035 at VGS = - 4.5 V - 9.4APPLICATIONS Load Switches Battery Swit
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