BSN20-7 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSN20-7
Маркировка: N20
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.6 W
Предельно допустимое напряжение сток-исток |Uds|: 50 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 1.5 V
Максимально допустимый постоянный ток стока |Id|: 0.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 0.8 nC
Время нарастания (tr): 2.99 ns
Выходная емкость (Cd): 5.6 pf
Сопротивление сток-исток открытого транзистора (Rds): 1.8 Ohm
Тип корпуса: SOT-23 SOT-346
BSN20-7 Datasheet (PDF)
bsn20-7.pdf
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BSN20N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits Low On-ResistanceID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25C Fast Switching Speed 1.8 @ VGS = 10V 500mA Low Input/Output Leakage 50V Lead Free By Design/RoHS Compliant (Note 1) 2.0 @ VGS = 4.5V 450mA "Green" Device (Note 2) Qualified to AEC-Q1
bsn20.pdf
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BSN20N-channel enhancement mode field-effect transistorRev. 03 26 June 2000 Product specification1. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:BSN20 in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.3. A
bsn205 bsn205a cnv 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBSN205; BSN205AN-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSN205; BSN205AD-MOS transistorDESCRIPTION QUICK REFERENCE DATAN-channel enhancement modeDrain-source voltage VDS max.
bsn20w 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102BSN20WN-channel enhancement modevertical D-MOS transistorProduct specification 2000 Mar 10Supersedes data of 1997 Jun 20Philips Semiconductors Product specificationN-channel enhancement modeBSN20Wvertical D-MOS transistorFEATURES PINNING - SOT323 Direct interface to C-MOS, TTL, etc.PIN SYMBOL DESCRIPTION
bsn20bk.pdf
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BSN20BK60 V, N-channel Trench MOSFET18 December 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc
bsn20.pdf
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BSN20N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Low Input Capacitance 1.8 @ VGS = 10V 500mA Fast Switching Speed 50V 2.0 @ VGS = 4.5V 450mA Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green
bsn20.pdf
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SMD Type MOSFETN-Channel MOSFETBSN20SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features Features3TrenchMOS technology Very fast switching Logic level compatible1 2Subminiature surface mount package. +0.1d +0.050.95-0.1 0.1-0.01+0.11.9-0.11.Gateg2.Source3.Drains Absolute Maximum Ratings Ta = 25ParameterSymbol
bsn20.pdf
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BSN20N-Channel Enhancement Mode Field Effect TransistorProduct Summary V 50VDS I 300mAD R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output LeakageApplications
bsn20.pdf
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BSN20N-Channel Enhancement-Mode MOSFETDescription and Applications This new generation MOSFET has been designed to minimize the on-) and yet maintain superior switching state resistance (RDS(on)performance, making it ideal for high efficiency power management applications. SOT23 D Power management functions DC-DC ConvertersG S BacklightingTop View
bsn20.pdf
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BSN20www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![BSN20-7](https://alltransistors.com/images/us.png)
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![BSN20-7](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C