BSN20-7 - описание и поиск аналогов

BSN20 N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Low Input Capacitance TA = 25 C Fast Switching Speed 1.8 @ VGS = 10V 500mA Low Input/Output Leakage 50V Lead Free By Design/RoHS Compliant (Note 1) 2.0 @ VGS = 4.5V 450mA "Green" Device (Note 2) Qualified to AEC-Q1

BSN20 N-channel enhancement mode field-effect transistor Rev. 03 26 June 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability BSN20 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. A

DISCRETE SEMICONDUCTORS DATA SHEET BSN205; BSN205A N-channel enhancement mode vertical D-MOS transistor April 1995 Product specification File under Discrete Semiconductors, SC13b Philips Semiconductors Product specification N-channel enhancement mode vertical BSN205; BSN205A D-MOS transistor DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode Drain-source voltage VDS max.

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BSN20W N-channel enhancement mode vertical D-MOS transistor Product specification 2000 Mar 10 Supersedes data of 1997 Jun 20 Philips Semiconductors Product specification N-channel enhancement mode BSN20W vertical D-MOS transistor FEATURES PINNING - SOT323 Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION

BSN20BK 60 V, N-channel Trench MOSFET 18 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Disc

SMD Type MOSFET N-Channel MOSFET BSN20 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features Features 3 TrenchMOS technology Very fast switching Logic level compatible 1 2 Subminiature surface mount package. +0.1 d +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Gate g 2.Source 3.Drain s Absolute Maximum Ratings Ta = 25 Parameter Symbol

BSN20 N-Channel Enhancement Mode Field Effect Transistor Product Summary V 50V DS I 300mA D R ( at V =10V) 2.5ohm DS(ON) GS R ( at V =4.5V) 3.0ohm DS(ON) GS General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low Input / Output Leakage Applications

BSN20 N-Channel Enhancement-Mode MOSFET Description and Applications This new generation MOSFET has been designed to minimize the on- ) and yet maintain superior switching state resistance (R DS(on) performance, making it ideal for high efficiency power management applications. SOT23 D Power management functions DC-DC Converters G S Backlighting Top View