BSO207P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSO207P
Маркировка: 207P
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 1.6 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.2 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 12 nC
trⓘ - Время нарастания: 22 ns
Cossⓘ - Выходная емкость: 380 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.045 Ohm
Тип корпуса: SO-8
BSO207P Datasheet (PDF)
bso207p bso207p h 13.pdf
BSO207P HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS dual P-Channel in SO8R V =4.5 V 45.0mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 70.0GS 150C operating temperatureI -5.7 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliantPG-DSO-8 Halogen-free according to IEC61249-2-21Ha
bso203ph bso203p bso203p h 1.31.pdf
BSO203P HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS dual P-Channel in SO8R V =4.5 V 21mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 34GS 150C operating temperatureI -8.2 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21PG-DSO-8Type Packa
bso201sp.pdf
BSO201SP HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS single P-Channel in SO8R V =4.5 V 8.0mDS(on),max GS Qualified according JEDEC1) for target applicationsV =2.5 V 12.9GS 150C operating temperatureI -14.9 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliantPG-DSO-8 Halogen-free according to IEC61249-2-2
bso200n03s rev1.7 g.pdf
BSO200N03S "9@/; %;+877+;BFeatures VDSQ 2CD CG:D49:?8 ') - . 7@B -'*-m DS(on) maxQ ) AD:>:J65 D649?@=@8I 7@B ?@D63@@
bso204p rev.1.2.pdf
BSO204PTMOptiMOS -P Power-TransistorProduct SummaryFeatureVDS -20 V Dual P-ChannelRDS(on) 30 m Enhancement modeID -7 A Super Logic Level (2.5 V rated) 150C operating temperature18S1 D1 Avalanche rated27G1 D1 dv/dt rated36S2 D245G2 D2Top View SIS00070Type PackageBSO204P P-SO 8Maximum Ratings,at Tj = 25 C, unless otherwise
bso200n03 v1.4 g.pdf
BSO200N03 "9@/; %;+877+;BFeatures VDSP 1BC BF9C389>7 &( , - 6?A ,&),m DS(on) maxP ( @C9=9I54 C538>?BPDSO8-85A=135 :D>3C9?> B?7 @?9>C-85A=135 :D>3C9?> 1=295>CP G35
bso200p03sh bso200p03s bso200p03s .pdf
BSO200P03S HOptiMOS-P Power-TransistorProduct SummaryFeaturesV -30 VDS P-ChannelR 20mDS(on),max Enhancement modeI -9.1 AD Logic level 150C operating temperaturePG-DSO-8 Qualified according JEDEC for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21Type Package Marking Lead free Halo
bso201sph bso201sp h 1.32.pdf
BSO201SP HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS single P-Channel in SO8R V =4.5 V 8.0mDS(on),max GS Qualified according JEDEC1) for target applicationsV =2.5 V 12.9GS 150C operating temperatureI -14.9 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliantPG-DSO-8 Halogen-free according to IEC61249-2-2
bso203sph bso203sp bso203sp h 1.31.pdf
BSO203SP HOptiMOS P-Power-TransistorProduct SummaryFeaturesV -20 VDS single P-Channel in SO8R V =4.5 V 21mDS(on),max GS Qualified according JEDEC for target applicationsV =2.5 V 34GS 150C operating temperatureI -8.9 AD Super Logic Level (2.5V rated) Pb-free plating; RoHS compliant, Halogen-free according to IEC61249-2-21PG-DSO-8Type Pa
bso200n03s.pdf
BSO200N03Swww.VBsemi.twN-Channel 20V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.012 at VGS = 10 V 1220 6.1 nC Optimized for High-Side Synchronous0.015 at VGS = 4.5 V 11Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
bso200n03.pdf
BSO200N03www.VBsemi.twDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFETPower MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg Tested0.016 at VGS = 10 V 8.5 100 % UIS Tested30 7.1 Compliant to RoHS Directive 2002/95/EC0.020 at VGS = 4.5 V 7.6APPLICATIONS Notebook System Power Low Current DC/DCD 1 D 2 SO-8 S
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918