Справочник MOSFET. BSO615CG

 

BSO615CG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: BSO615CG
   Тип транзистора: MOSFET
   Полярность: NP
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3.1 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 75 ns
   Cossⓘ - Выходная емкость: 90 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.11 Ohm
   Тип корпуса: SO-8

 Аналог (замена) для BSO615CG

 

 

BSO615CG Datasheet (PDF)

 ..1. Size:435K  infineon
 bso615cg.pdf

BSO615CG BSO615CG

Rev. 2.1BSO 615 C GSIPMOS Small-Signal-TransistorFeatures Product Summary N PDrain source voltage VDS 60 -60 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.11 0.3resistance Logic LevelContinuous drain current ID 3.1 -2 A Avalanche rated Pb-free lead plating; RoHS compliantType Package MarkingBSO 615 C PG-DSO-8 615CMaximum Ratings,at Tj =

 7.1. Size:162K  infineon
 bso615c.pdf

BSO615CG BSO615CG

Preliminary dataBSO 615 CSIPMOS Small-Signal-TransistorFeatures Product Summary N PDrain source voltage VDS 60 -60 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.11 0.3resistance Logic LevelContinuous drain current ID 3.1 -2 A Avalanche rated dv/dt ratedType Package Ordering CodeBSO 615 C SO 8 Q67041-S4024Maximum Ratings,at Tj = 25 C,

 8.1. Size:501K  infineon
 bso615ng.pdf

BSO615CG BSO615CG

G Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Marking615NRev. 1.2 Page 1 2012-04-04Rev. 1.2 Page 2 2012-04-04Rev. 1.2 Page 3 2012-04-04Rev. 1.2 Page 4 2012-04-04Rev. 1.2 Page 4 2012-04-04Rev. 1.2 Page 5 2012-04-04Rev. 1.4 Page 6 2012-04-04Rev. 1.2 Page 7 2012-04-04

 8.2. Size:522K  infineon
 bso615n .pdf

BSO615CG BSO615CG

G Pb-free lead plating; RoHS compliantMarking615NRev. 1.1 Page 1 2007-02-21Rev. 1.1 Page 2 2007-02-21Rev. 1.1 Page 3 2007-02-21Rev. 1.1 Page 4 2007-02-21Rev. 1.1 Page 4 2007-02-21Rev. 1.1 Page 5 2007-02-21Rev. 1.1 Page 6 2007-02-21Rev. 1.1 Page 7 2007-02-21

 8.3. Size:104K  infineon
 bso615n.pdf

BSO615CG BSO615CG

Preliminary Data BSO 615NSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 60 VVDS Dual N ChannelDrain-Source on-state resistance 0.15 Enhancement mode RDS(on) Continuous drain current 2.6 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 615N SO 8 Q67041-S2843Maximum Ratings, at Tj = 25 C, un

 8.4. Size:108K  infineon
 bso615nv.pdf

BSO615CG BSO615CG

Preliminary DataBSO 615NVSIPMOS Small-Signal-TransistorProduct SummaryFeaturesDrain source voltage 60 VVDS Dual N ChannelDrain-Source on-state resistance 0.12 Enhancement mode RDS(on) Continuous drain current 3.1 AID Avalanche rated dv/dt ratedType Package Ordering CodeBSO 615NV SO 8 Q67041-S2844Maximum Ratings, at Tj = 25 C, unless otherwise

 8.5. Size:913K  cn vbsemi
 bso615ng.pdf

BSO615CG BSO615CG

BSO615NGwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel

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