Rev. 2.1BSO 615 C GSIPMOS Small-Signal-TransistorFeatures Product Summary N PDrain source voltage VDS 60 -60 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.11 0.3resistance Logic LevelContinuous drain current ID 3.1 -2 A Avalanche rated Pb-free lead plating; RoHS compliantType Package MarkingBSO 615 C PG-DSO-8 615CMaximum Ratings,at Tj =

Preliminary dataBSO 615 CSIPMOS Small-Signal-TransistorFeatures Product Summary N PDrain source voltage VDS 60 -60 V Dual N- and P -Channel Enhancement mode Drain-Source on-state RDS(on) 0.11 0.3resistance Logic LevelContinuous drain current ID 3.1 -2 A Avalanche rated dv/dt ratedType Package Ordering CodeBSO 615 C SO 8 Q67041-S4024Maximum Ratings,at Tj = 25 C,

G Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Marking615NRev. 1.2 Page 1 2012-04-04Rev. 1.2 Page 2 2012-04-04Rev. 1.2 Page 3 2012-04-04Rev. 1.2 Page 4 2012-04-04Rev. 1.2 Page 4 2012-04-04Rev. 1.2 Page 5 2012-04-04Rev. 1.4 Page 6 2012-04-04Rev. 1.2 Page 7 2012-04-04

G Pb-free lead plating; RoHS compliantMarking615NRev. 1.1 Page 1 2007-02-21Rev. 1.1 Page 2 2007-02-21Rev. 1.1 Page 3 2007-02-21Rev. 1.1 Page 4 2007-02-21Rev. 1.1 Page 4 2007-02-21Rev. 1.1 Page 5 2007-02-21Rev. 1.1 Page 6 2007-02-21Rev. 1.1 Page 7 2007-02-21

Preliminary Data BSO 615NSIPMOS Small-Signal-TransistorFeatures Product SummaryDrain source voltage 60 VVDS Dual N ChannelDrain-Source on-state resistance 0.15 Enhancement mode RDS(on) Continuous drain current 2.6 AID Avalanche rated Logic Level dv/dt ratedType Package Ordering CodeBSO 615N SO 8 Q67041-S2843Maximum Ratings, at Tj = 25 C, un

Preliminary DataBSO 615NVSIPMOS Small-Signal-TransistorProduct SummaryFeaturesDrain source voltage 60 VVDS Dual N ChannelDrain-Source on-state resistance 0.12 Enhancement mode RDS(on) Continuous drain current 3.1 AID Avalanche rated dv/dt ratedType Package Ordering CodeBSO 615NV SO 8 Q67041-S2844Maximum Ratings, at Tj = 25 C, unless otherwise

BSO615NGwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channel