BSP135 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSP135
Маркировка: BSP135
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.12 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 3.7 nC
trⓘ - Время нарастания: 5.6 ns
Cossⓘ - Выходная емкость: 8.5 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 45 Ohm
Тип корпуса: SOT-223
BSP135 Datasheet (PDF)
bsp135.pdf
SIPMOS Small-Signal Transistor BSP 135 VDS 600 V ID 0.100 A RDS(on) 60 N channel Depletion mode High dynamic resistance Available grouped in VGS(th)Type Ordering Tape and Reel Information Pin Configuration Marking PackageCode1 2 3 4BSP 135 Q62702-S655 E6327: 1000 pcs/reel G D S D BSP 135 SOT-223BSP 135 Q67000-S283 E6906: 1000 pcs/reelVGS(th) selected in groups:
bsp135.pdf
BSP135SIPMOS Small-Signal-TransistorProduct Summary FeaturesVDS 600 V N-channelRDS(on),max 60 W Depletion modeIDSS,min 0.02 A dv /dt rated Available with V indicator on reelGS(th) Pb-free lead plating; RoHS compliantPG-SOT223 Qualified according to AEC Q101Type Package Tape and Reel Information Marking Packaging Type Package Tape and Ree
bsp130 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP130N-channel enhancement modevertical D-MOS transistorApril 1995Product specificationFile under Discrete Semiconductors, SC13bPhilips Semiconductors Product specificationN-channel enhancement mode verticalBSP130D-MOS transistorFEATURES QUICK REFERENCE DATA Direct interface to C-MOS, TTL,SYMBOL PARAMETER CONDITIONS MIN. MAX. UNI
bsp130.pdf
DISCRETE SEMICONDUCTORSDATA SHEETageM3D087BSP130N-channel enhancement modevertical D-MOS transistorProduct specification 2001 Dec 11Supersedes data of 1997 Jun 23Philips Semiconductors Product specificationN-channel enhancement modeBSP130vertical D-MOS transistorFEATURES PINNING - SOT223 Direct interface to C-MOS, TTL, etc.PIN DESCRIPTION High-speed switch
bsp130.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918