BSP300 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSP300
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.19 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 16 ns
Cossⓘ - Выходная емкость: 20 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 20 Ohm
Тип корпуса: SOT-223
BSP300 Datasheet (PDF)
bsp300.pdf
BSP 300SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.0... 4.0 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 300 800 V 0.19 A 20 SOT-223 BSP 300Type Ordering Code Tape and Reel InformationBSP 300 Q67050 -T0009 E6433BSP 300 Q67050-T0017 E6327Maximum RatingsParameter Symbol Values UnitCo
bsp300.pdf
BSP300SIPMOS Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.0... 4.0 V Pb-free lead plating; RoHS compliant Qualified according to AEC Q101Pin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP300 800 V 0.19 A 20 PG-SOT223 BSP300Type RoHS compliant Tape and Reel Information PackagingBSP300Yes L632
bsp304a.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP304; BSP304AP-channel enhancement modevertical D-MOS transistors1995 Apr 07Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationP-channel enhancement modeBSP304; BSP304Avertical D-MOS transistorsFEATURES DESCRIPTION Direct interface to C-MOS, TTL etc. P-c
bsp304.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBSP304; BSP304AP-channel enhancement modevertical D-MOS transistors1995 Apr 07Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationP-channel enhancement modeBSP304; BSP304Avertical D-MOS transistorsFEATURES DESCRIPTION Direct interface to C-MOS, TTL etc. P-c
bsp30 bsp31 bsp32 bsp33.pdf
BSP30/31BSP32/33MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 NPN COMPLEMENTS ARE BSP40, BSP41,1BSP42 AND BSP43 RESPECTIVELYSOT-223INTERNAL SCH
bsp3081.pdf
Preliminary dataBSP308SIPMOS Small-Signal-TransistorFeaturesProduct Summary N-Channel Drain source voltage VDS 30 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.05 Logic Level Continuous drain current ID 4.7 A dv/dt rated4321VPS05163Type Package Ordering Code Pin 1 Pin 2/4 PIN 3BSP308 SOT-223 Q67000-S4011 G D SMaximum Ratings,a
bsp308.pdf
Preliminary dataBSP308SIPMOS Power-TransistorFeaturesProduct Summary N-Channel Drain source voltage VDS 30 V Enhancement modeDrain-Source on-state resistance RDS(on) 0.05 Logic Level Continuous drain current ID 4.7 A dv/dt rated4321VPS05163Type Package Ordering Code Pin 1 Pin 2/4 PIN 3BSP308 SOT-223 Q67000-S4011 G D SMaximum Ratings,at Tj =
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918