BSP320S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: BSP320S
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 2.9 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 9.7 nC
trⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 90 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
Тип корпуса: SOT-223
BSP320S Datasheet (PDF)
bsp320s.pdf
BSP320S Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Tape and Reel PackagingL6327: 1000pcs/rPG-SOT223 Non dryNon dryNon dryPIN 1PG-SOT223L6433: 4000pcs/r Non dryRev 2.32008-03-26BSP320S2008-03-26Rev 2.3BSP320S2008-03-26Rev 2.3BSP320SRev 2.32008-03-26BSP320SRev 2.32008-03-26BSP320S2008-03-26Rev 2.3BSP320S
bsp31 bsp32 bsp33 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BSP31; BSP32; BSP33PNP medium power transistors1999 Apr 26Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationPNP medium power transistors BSP31; BSP32; BSP33FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP
bsp30 bsp31 bsp32 bsp33.pdf
BSP30/31BSP32/33MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR PNPTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 NPN COMPLEMENTS ARE BSP40, BSP41,1BSP42 AND BSP43 RESPECTIVELYSOT-223INTERNAL SCH
bsp31 bsp32 bsp33.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
bsp324.pdf
BSP 324SIPMOS Small-Signal Transistor N channel Enhancement mode VGS(th) = 1.5 ...2.5 VPin 1 Pin 2 Pin 3 Pin 4G D S DType VDS ID RDS(on) Package MarkingBSP 324 400 V 0.17 A 25 SOT-223 BSP 324Type Ordering Code Tape and Reel InformationBSP 324 Q67000-S215 E6327Maximum RatingsParameter Symbol Values UnitDrain source voltage VDS 400 VVDGRDrain-gate vol
bsp321p.pdf
BSP321PSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 900mDS(on),max Enhancement modeI -0.98 AD Normal level Avalanche ratedPG-SOT-223 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101Type Package Tape and Reel Information Marking Lead free PackingBSP321P PG-SOT-223 L6327: 1000 pcs/reel BS
bsp322p.pdf
BSP322PSIPMOS Small-Signal-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 800mDS(on),max Enhancement modeI -1 AD Logic level Avalanche ratedPG-SOT-223 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101Type Package Tape and Reel Information Marking Lead free PackingBSP322P PG-SOT-223 L6327: 1000 pcs/reel BSP322
bsp324.pdf
Rev. 2.1BSP324SIPMOS Power-TransistorProduct SummaryFeatureVDS 400 V N-ChannelRDS(on) 25 Enhancement modeID 0.17 A Logic LevelSOT-223 dv/dt rated Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package Pb-free Packaging Tape and Reel Information MarkingPG-SOT223 Yes Non dry L6327: 1000 pcs/reelBSP324 BSP324Ma
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918