SI4831DY - описание и поиск аналогов

Si4831DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.045 @ VGS = 10 V "5 30 30 0.090 @ VGS = 4.5 V "3.5 SCHOTTKY PRODUCT SUMMARY Vf (V) VKA (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3 A 3 S K SO-8 AK 1 8 G AK 2 7 SD 3 6 GD 4 5 Top View D A P-Channel MOSFET ABSOLUTE MA

Si4831BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Available 0.042 at VGS = - 10 V - 6.6 LITTLE FOOT Plus Power MOSFET - 30 7.8 0.065 at VGS = - 4.5 V - 5.3 100 % Rg Tested APPLICATIONS SCHOTTKY PRODUCT SUMMARY HDD VF (V

Si4831BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Available 0.042 at VGS = - 10 V - 6.6 LITTLE FOOT Plus Power MOSFET - 30 7.8 0.065 at VGS = - 4.5 V - 5.3 100 % Rg Tested APPLICATIONS SCHOTTKY PRODUCT SUMMARY HDD VF (V

Si4835DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.019 @ VGS = -10 V -8.0 -30 30 0.033 @ VGS = -4.5 V -6.0 S S S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D D D D Ordering Information Si4835DY Si4835DY-T1 (with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbo

Si4835BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) Qg (Typ) D Advanced High Cell Density Process D 100% Rg Tested 0.018 @ VGS = -10 V -9.6 -30 -30 -25 -25 APPLICATIONS 0.030 @ VGS = -4.5 V -7.5 D Load Switches - Notebook PCs - Desktop PCs S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top Vie

New Product Si4838BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0027 at VGS = 4.5 V 34 100 % Rg Tested 0.0032 at VGS = 2.5 V 12 31 33 nC 100 % UIS Tested 0.0040 at VGS = 1.8 V 28 APPLICATIONS Low VIN DC/DC SO-8 D S D 1 8 S 2 7 D D S 3

Si4836DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.003 at VGS = 4.5 V 25 TrenchFET Power MOSFET 0.004 at VGS = 2.5 V 12 22 PWM Optimized 0.005 at VGS = 1.8 V 19 100 % Rg Tested APPLICATIONS Low Voltage Synchronous Rectification Low

Si4837DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D LITTLE FOOTr Plus Schottky 0.020 @ VGS = -10 V 8.3 D 100% Rg Tested -30 30 0.030 @ VGS = - 4.5 V 6.8 APPLICATIONS SCHOTTKY PRODUCT SUMMARY D Battery Charging D DC/DC Converters Vf (V) - Asynchronous Buck VKA (V) Diode

Si4830ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 7.5 LITTLE FOOT Plus Schottky 30 0.030 at VGS = 4.5 V 6.5 Si4830DY Pin Compatible PWM Optimized 100 % Rg Tested SCHOTTKY PRODUCT SUMMARY Comp

Si4832DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 9 30 30 0.028 @ VGS = 4.5 V 7.3 SCHOTTKY PRODUCT SUMMARY VSD (V) VDS (V) Diode Forward Voltage IF (A) 30 0.53 V @ 3.0 A 4.0 D SO-8 SD 1 8 Ordering Information S D 2 7 Si4832DY SD Schottky Diode 3 6 Si4832DY-T1 (with Tape and Reel)

Specification Comparison Vishay Siliconix Si4833ADY vs. Si4833DY Description P-Channel, 30 V (D-S) MOSFET with Schottky Diode Package SO-8 Pin Out Identical Part Number Replacements Si4833ADY-T1-E3 Replaces Si4833DY-T1-E3 Si4833ADY-T1-E3 Replaces Si4833DY-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Parameter Symbol Si4833ADY Si4833DY Unit Drain-Source Voltage

Si4833DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = 10 V "3.5 30 30 0.180 @ VGS = 4.5 V "2.5 SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) Diode Forward Voltage IF (A) 30 0.5 V @ 1.0 A 1.4 S K SO-8 K A 1 8 G K A 2 7 SD 3 6 GD 4 5 D A Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C

New Product Si4835DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.018 at VGS = - 10 V - 13 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.030 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches - Notebook PCs - Des

Si4838DY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Available 0.003 at VGS = 4.5 V 25 TrenchFET Power MOSFETs 2.5 V Rated 12 0.004 at VGS = 2.5 V 20 100 % Rg Tested D SO-8 S D 1 8 S D 2 7 S D 3 6 G G D 4 5 Top View S Ordering Information Si4838DY-T1-

Si4833ADY Vishay Siliconix P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.072 at VGS = - 10 V - 4.6 LITTLE FOOT Plus Power MOSFET - 30 - 4.6 0.110 at VGS = - 4.5 V - 3.4 Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMMARY VF

Si4833BDY Vishay Siliconix P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition LITTLE FOOT Plus Power MOSFET 0.068 at VGS = - 10 V - 4.6 - 30 4.6 100 % Rg Tested 0.110 at VGS = - 4.5 V - 3.4 Compliant to RoHS Directive 2002/95/EC SCHOTTKY

Si4830ADY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY LITTLE FOOT Plus Schottky VDS (V) rDS(on) ( )ID (A) Si4830DY Pin Compatible 0.022 at VGS = 10 V 7.5 PWM Optimized RoHS 30 0.030 at VGS = 4.5 V 6.5 COMPLIANT 100 % Rg Tested SCHOTTKY PRODUCT SUMMARY VSD (V) APPLICATIONS VDS (V) IF (A) Diode Forward Vo

Si4834BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.022 at VGS = 10 V 7.5 TrenchFET Power MOSFET 30 0.030 at VGS = 4.5 V 6.5 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SCHOTTKY PRODUCT SUMM

Si4834DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 30 30 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VSD (v) VDS (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 D1 D1 D2 D2 SO-8 S1 1 D1 8 G1 2 D1 7 Schottky Diode G1 G2 S2 3 D2 6 G2 4 D2 5 Top View S1 S2 Ordering

Si4830CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.020 at VGS = 10 V 8.0 LITTLE FOOT Plus Schottky Channel-1 30 7.3 PWM Optimized 0.025 at VGS = 4.5 V 8.0 100 % Rg Tested 0.020 at VGS = 10 V 8.0 Channel-2 30 7

Si4830CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.020 at VGS = 10 V 8.0 LITTLE FOOT Plus Schottky Channel-1 30 7.3 PWM Optimized 0.025 at VGS = 4.5 V 8.0 100 % Rg Tested 0.020 at VGS = 10 V 8.0 Channel-2 30 7

Si4830DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 30 30 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VSD (V) VDS (V) Diode Forward Voltage IF (A) 30 0.50 V @ 1.0 A 2.0 D1 D1 D2 D2 SO-8 S1 1 D1 8 G1 2 D1 7 Schottky Diode G1 G2 S2 3 D2 6 G2 4 D2 5 Top View S1 Ordering In

New Product Si4838BDY Vishay Siliconix N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.0027 at VGS = 4.5 V 34 100 % Rg Tested 0.0032 at VGS = 2.5 V 12 31 33 nC 100 % UIS Tested 0.0040 at VGS = 1.8 V 28 APPLICATIONS Low VIN DC/DC SO-8 D S D 1 8 S 2 7 D D S 3

Si4834CDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) Definition 0.020 at VGS = 10 V 8.0 TrenchFET Power MOSFET Channel-1 30 7.3 0.025 at VGS = 4.5 V 8.0 100 % Rg Tested 0.020 at VGS = 10 V 8.0 100 % UIS Tested Channel-2 30

New Product Si4835DDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.018 at VGS = - 10 V - 13 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.030 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches - Notebook PCs - Des

Si4835DY Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.019 @ VGS = -10 V -8.0 -30 30 0.033 @ VGS = -4.5 V -6.0 S S S SO-8 SD 1 8 G S D 2 7 SD 3 6 G D 4 5 Top View D D D D Ordering Information Si4835DY Si4835DY-T1 (with Tape and Reel) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbo

SI4835DDY www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Available 0.0125 at VGS = - 10 V - 11.6 TrenchFET Power MOSFET - 30 22 nC 100 % Rg Tested 0.0180 at VGS = - 4.5 V - 10 100 % UIS Tested APPLICATIONS Load Switches S - Notebook PCs SO-8 - Desktop PC