2SK1581 - описание и поиск аналогов

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1581 SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1581, N-channel vertical type MOS FET, can be 2.8 0.2 driven by 2.5 V power supply. +0.1 0.65 0.15 1.5 As the 2SK1581 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances 2 including VCR cam

SMD Type MOSFET N-Channel MOSFET 2SK1581 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 16V ID = 0.2 A 1 2 RDS(ON) 5 (VGS = 2.5V) +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 RDS(ON) 3 (VGS = 4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16

SMD Type MOSFET N-Channel MOSFET 2SK1581 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 16V ID = 0.2 A 1 2 RDS(ON) 5 (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 RDS(ON) 3 (VGS = 4V) 1.9 -0.2 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage V

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1580 SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1580 is an N -channel vertical type MOS FET which 2.1 0.1 can be driven by 2.5 V power supply. 1.25 0.1 As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1582 SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1582, N-channel vertical type MOS FET, is a 2.8 0.2 switching device which can be driven directly by the output of +0.1 0.65 0.15 1.5 ICs having a 5 V power source. The 2SK1582 has excellent switching characteristics and is 2 suitable for use as a

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1584 N-CHANNEL MOS FET FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1584 is a switching device which can be driven directly by a 5-V power source. 4.5 0.1 Electrode Connection The 2SK1584 features a low on-state resistance and excellent 1.5 0.1 1.6 0.2 1.Source switching characteristics, and is suitable for applicati

SMD Type MOSFET N-Channel MOSFET 2SK1588 1.70 0.1 Features VDS (V) = 16V ID = 3 A 0.42 0.1 0.46 0.1 RDS(ON) 0.3 (VGS = 4V) RDS(ON) 0.5 (VGS = 2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID 3 A Puls

SMD Type MOSFET N-Channel MOSFET 2SK1582 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V ID = 0.2 A 1 2 RDS(ON) 5 (VGS = 4V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 3 (VGS = 10V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage V

SMD Type MOSFET N-Channel MOSFET 2SK1589 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 100V ID = 0.1 A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 30 (VGS = 4V) +0.1 1.9 -0.2 RDS(ON) 25 (VGS = 10V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volta

SMD Type MOSFET N-Channel MOSFET 2SK1584 1.70 0.1 Features VDS (V) = 30V ID = 0.5 A 0.42 0.1 0.46 0.1 RDS(ON) 1.5 (VGS = 10V) RDS(ON) 2 (VGS = 4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5 A Pul

SMD Type MOSFET N-Channel MOSFET 2SK1583 1.70 0.1 Features VDS (V) = 16V ID = 0.5 A 0.42 0.1 RDS(ON) 2 (VGS = 2.5V) 0.46 0.1 RDS(ON) 1.5 (VGS = 4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID 0.5 A Pul

SMD Type MOSFET N-Channel MOSFET 2SK1587 1.70 0.1 Features VDS (V) = 16V ID = 2 A RDS(ON) 0.5 (VGS = 4V) 0.42 0.1 0.46 0.1 RDS(ON) 0.8 (VGS = 2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID 2 A Puls

SMD Type MOSFET N-Channel MOSFET 2SK1585 1.70 0.1 Features VDS (V) = 16V ID = 1 A 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 1.2 (VGS = 2.5V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 16 V Gate-Source Voltage VGS 16 Continuous Drain Current ID 1 A Pulsed

SMD Type MOSFET N-Channel MOSFET 2SK1586 1.70 0.1 Features VDS (V) = 30V ID = 1 A RDS(ON) 0.6 (VGS = 10V) 0.42 0.1 0.46 0.1 RDS(ON) 1 (VGS = 4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1 A Pulsed

SMD Type MOSFET N-Channel MOSFET 2SK1589 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 100V ID = 0.1 A 1 2 RDS(ON) 30 (VGS = 4V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 25 (VGS = 10V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 1

SMD Type MOSFET N-Channel MOSFET 2SK1582 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V ID = 0.2 A 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 5 (VGS = 4V) +0.1 1.9-0.1 RDS(ON) 3 (VGS = 10V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

2SK1588 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.022 at VGS = 4.5 V 6.8 RoHS 30 10 nC COMPLIANT APPLICATIONS 0.027 at VGS = 2.5 V 6.0 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

2SK1589-T1B www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 100 2.8 at VGS = 10 V Low Threshold 2 V (typ.) 260 Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 20