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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84LT1/D BSS84LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL Field Effect Transistors ENHANCEMENT MODE TMOS MOSFET 3 DRAIN 3 1 2 1 CASE 318 08, Style 21 GATE SOT 23 (TO 236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84/D BSS84 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL Field Effect Transistors ENHANCEMENT MODE TMOS MOSFET 3 DRAIN 3 1 2 1 CASE 318 08, Style 21 GATE SOT 23 (TO 236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating Symbol

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84LT1/D BSS84LT1 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL Field Effect Transistors ENHANCEMENT MODE TMOS MOSFET 3 DRAIN 3 1 2 1 CASE 318 08, Style 21 GATE SOT 23 (TO 236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BSS84/D BSS84 Motorola Preferred Device Low rDS(on) Small-Signal MOSFETs TMOS Single P-Channel P CHANNEL Field Effect Transistors ENHANCEMENT MODE TMOS MOSFET 3 DRAIN 3 1 2 1 CASE 318 08, Style 21 GATE SOT 23 (TO 236AB) 2 SOURCE MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) Rating Symbol

July 2002 BSS84 P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode field effect -0.13A, -50V. RDS(ON) = 10 @ VGS = -5 V transistors are produced using Fairchild s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on- Voltage controlled p-chan

BSS84AKMB 50 V, single P-channel Trench MOSFET Rev. 1 6 June 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ElectroStatic Di

BSS84AKV 50 V, 170 mA dual P-channel Trench MOSFET Rev. 1 19 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to

BSS84AK 50 V, 180 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switc

BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switching AEC-Q101 qualified

BSS84AKW 50 V, 150 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV Very fast switchin

BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible ESD protection up to 1 kV

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BSS84V DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-563 Low Gate Threshold Voltage Case Material Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020C Fast Switching Speed Lead Free By

BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-363 Low Gate Threshold Voltage Case Material Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitiv

BSS84DW DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-363 Low Gate Threshold Voltage Case Material Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020C Fast Switching Speed Termina

BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-23 Low Gate Threshold Voltage Case Material UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020 Fast Switching Speed Terminals Solderable per MIL-STD-202, Method 208 Low Input/Out

BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Low Gate Threshold Voltage V(BR)DSS RDS(on) max TA = 25 C Low Input Capacitance Fast Switching Speed -50V 10 @ VGS = -5V -130mA Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant (Note 1) "Green" Device (Note 2) Qua

BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-Resistance V(BR)DSS RDS(on) max TA = +25 C Low Gate Threshold Voltage -50V 10 @ VGS = -5V -130mA Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Description Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET has been desi

BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT-323 Low Gate Threshold Voltage Case Material Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020C Fast Switching Speed Terminal

BSS84PW SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance 8 RDS(on) Avalanche rated Continuous drain current -0.15 A ID Logic Level 3 dv/dt rated 2 Qualified according to AEC Q101 1 VSO05561 Halogen-free according to IEC61249-2-21 Type Package Tape and Reel Marking

BSS 84 P SIPMOS Small-Signal-Transistor Product Summary Feature VDS -60 V P-Channel RDS(on) 8 Enhancement mode ID -0.17 A Logic Level PG-SOT-23 Avalanche rated 3 dv/dt rated 2 1 VPS05161 Tape and Reel Type Package Marking Drain BSS 84 P PG-SOT-23 L6327 3000pcs/r. YBs pin 3 Gate BSS 84 P PG-SOT-23 L6433 10000pcs/r. YBs pin1 Source pin 2 Maximum Ratings, at TA

Preliminary data BSS 84 P SIPMOS Small-Signal-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 8 Avalanche rated Continuous drain current ID -0.17 A Logic Level 3 dv/dt rated 2 1 VPS05161 Type Package Ordering Code Marking Pin 1 PIN 2 PIN 3 BSS 84 P SOT-23 Q67041-S1417 YBs G S D Maxi

BSS84A Features High Density Cell Design for Ultra Low RDS(on) Rugged and Reliable Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junct

BSS84 Features High Density Cell Design for Ultra Low RDS(on) Rugged and Reliable Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 P-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF" MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Juncti

BSS84L, BVSS84L Power MOSFET Single P-Channel SOT-23 -50 V, 10 W SOT-23 Surface Mount Package Saves Board Space www.onsemi.com BV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable V(BR)DSS RDS(ON) MAX These Devices are Pb-Free and are RoHS Compliant -50 V 10 W @ 10 V MAXIMUM RATINGS (TJ

BSS84L, BVSS84L Power MOSFET Single P-Channel SOT-23 -50 V, 10 W SOT-23 Surface Mount Package Saves Board Space http //onsemi.com AEC Q101 Qualified and PPAP Capable - BVSS84L These Devices are Pb-Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) -50 V 10 W @ 10 V Rating Symbol Value Unit P-Channel Drain-to-Source Voltag

BSS84LT1 Power MOSFET 130 mA, 50 V P-Channel SOT-23 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power http //onsemi.com management circuitry. Typical applications are DC-DC converters, load switching, power management in portable and battery-powered products such as computers, printers, cellular and cordless telepho

BSS84 P-Channel Enhancement Mode Field-Effect Transistor Description Features This P-channel enhancement-mode field-effect -0.13 A, -50 V, RDS(ON) = 10 at VGS = -5 V transistor is produced using ON Semiconductor s Voltage-Controlled P-Channel Small-Signal proprietary, high cell density, DMOS technology. Switch This very high density process minimizes on-state resista

UNISONIC TECHNOLOGIES CO., LTD BSS84Z Preliminary Power MOSFET 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs BSS84 P-CHANNEL MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 8 @-10V 3 -50V -0.13A @ 10 -5V 1 DESCRIPTION 2 These miniature surface mount MOSFETs reduce power loss conserve 1. GATE energy, making this device ideal for use in small power management circuitry. 2. SOURCE 3. DRAIN

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. BSS84 SOT-23 (SOT-23 Field Effect Transistors) P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs

BSS84 Small Signal MOSFET P-Channel 3 DRAIN SOT-23 Features 3 1 *Low On-Resistance 10 GATE 1 *Low Input Capacitance 30PF 2 *Low Out put Capacitance 10PF 2 SOURCE *Low Threshole 2.0V *Fast Switching Speed 2.5ns Application * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C

BSS84W P-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 Description * These miniature surface mount MOSFETs reduce power loss SOT-323(SC-70) conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc dc converters, load switching, power management in portable and battery powered 3 DRAIN products such as computers, printers,

FM120-M WILLAS THRU BSS84WT1 Power MOSFET mAmps, 50 Vo ts mAmps, 50 Vo ts 130 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application

FM120-M WILLAS BSS84LT1 THRU mAmps, 50 Vo ts Power MOSFET 130 BARRIER RECTIFIERS -20V- 200V FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimi

Spec. No. C465S3 Issued Date 2012.05.19 CYStech Electronics Corp. Revised Date 2013.09.09 Page No. 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET BVDSS -50V BSS84KS3 ID -170mA 8 (MAX) RDSON@-10V 10 (MAX) RDSON@-5V 12 (MAX) RDSON@-4V Features 32 (MAX) RDSON@-2.5V Low gate charge Excellent thermal and electrical capabilities Pb-

Spec. No. C465N3 Issued Date 2009.03.03 CYStech Electronics Corp. Revised Date 2012.05.18 Page No. 1/ 8 50V P-CHANNEL Enhancement Mode MOSFET BVDSS -50V BSS84N3 ID -130mA RDSON@VGS=-5V, ID=-100mA 6 (typ) Features Low gate charge Excellent thermal and electrical capabilities Pb-free package Equivalent Circuit Outline BSS84N3 SOT-23 D G Gate

BSS84 Rev.I Nov.-2023 DATA SHEET / Descriptions SOT-23 P P-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features C-MOS TTL 1000V Low threshold voltage, Direct interface to C-MOS, TTL etc, High-speed switching,ESD Improved Capabili

LBSS84WT1G S-LBSS84WT1G Power MOSFET 130 mA, 50V P Channel SC-70 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Energy efficient 2. DEVICE MARKING AND OR

LBSS84LT1G S-LBSS84LT1G Power MOSFET 130 mA, 50V P Channel SOT-23 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SOT23(TO-236) qualified and PPAP capable. Energy efficient 2. DEVICE MARKING AND O

LESHAN RADIO COMPANY, LTD. Power MOSFET mAmps, 50 Vo ts 130 P Channel SC88 LBSS84DW1T1G S-LBSS84DW1T1G These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc dc converters, load switching, power management in portable and battery powered products such as compute

LBSS84ELT1G S-LBSS84ELT1G Power MOSFET 60V P Channel 1. FEATURES Advanced trench cell design. High speed switch. G-S ESD Protected 1000V Pb-Free Package is available. We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change re

BSS8402DW COMPLIMENTARY PAIR ENHANCEMENT MODE MOSFETS This space-efficient device contains an electrically-isolated complimentary pair of enhancement-mode MOSFETs (one N-channel and one P-channel). It SOT- 363 comes in a very small SOT-363 package. This device is ideal for portable applications where board space is at a premium. 4 4 FEATURES 5 5 Complimentary Pairs 6 6 3 3 Low O

BSS84 P-CHANNEL ENHANCEMENT MODE MOSFET SOT- 23 This is a P-channel, enhancement-mode MOSFET, housed in the industry- standard, SOT-23 package. This device is ideal for portable applications where board space is at a premium. 3 FEATURES 2 Low On-Resistance Low Gate Threshold Voltage Fast Switching 1 Available in lead-free plating (100% matte tin finish) Drain 3 APPLICATIONS Swi

GSMBSS84 GSMBSS84 50V P-Channel Enhancement Mode MOSFET Product Description Features -50V/-0.1A,RDS(ON)=10 @VGS=-5V GSMBSS84, P-Channel enhancement mode Super high density cell design for extremely MOSFET, uses Advanced Trench Technology to low RDS (ON) provide excellent RDS(ON), low gate charge. Exceptional on-resistance and maximum DC current capability The

BSS84 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement-Mode MOS FETs MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS -50 V Gate- Source Voltage VGS +20 V Drain Current (continuous) IDR -130 mA Drain Current (pulsed) IDRM -520

R UMW UMW BSS84 UMW BSS84 UMW BSS84 P-Channel Enhancement Mode MOSFET SOT 23 Features VDS (V) = -50V ID = -0.13 A RDS(ON) 10 (VGS = -5V) 1. GATE MARKING 2. SOURCE 3. DRAIN P. D Y Absolute Maximum Ratings Ta = 25 unless otherwise specified Parameter Symbol Rating Unit Drain-Source Voltage VDSS -50 V Gate-Source Voltage VGSS 20 V Drain C

P-Channel MOSFET BSS84 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING SP or B 8 4 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-So

BSS84 SOT-23 Plastic-Encapsulate MOSFETS -50V P-Channel MOSFET SOT-23 ID V(BR)DSS RDS(on)MAX 3 8 @ -10V -50V -130mA 10 @ -5 V 1. GATE 2. SOURCE 1 3. DRAIN 2 FEATURE APPLICATION Energy Efficient DC-DC converters,load switching, power management in portable and battery Low Threshold Voltage -powered products such as computers, High-speed Switching

DATA SHEET BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR VOLTAGE -60 V CURRENT -130mA FEATURES DESIGNED FOR HIGH SPEED PULSE AMPLIFIER AND D DRIVE APPLICATION. HIGH DENSITY CELL DESIGN FOR LOW RDS(ON) VOLTAGE CONTROLLED SMALL SIGNAL SWITCHING. S HIGH SATURATION CURRENT CAPABILITY. LEAD FREE AND HALOGEN-FREE. MECHANICAL DATA G CASE

BSS84 -50V/-0.18A P Channel Small Signal MOSFET Features V R Typ I Max (BR)DSS DS(ON) D Low RDS(on) @VGS=-10V 1.8 @ -10V -5V Logic Level Control -50V -0.18A P Channel SOT23 Package 2 @ -4.5V ESD Protection Pb-Free, RoHS Compliant Applications High-side Load Switch Switching Circuits High Speed line Driver General Purpose Interfacin

RoHS COMPLIANT BSS84 P-Channel Enhancement Mode Field Effect Transistor Product Summary V -60 V DS I -0.17 A D R ( at V =-10V) 8 ohm DS(ON) GS R ( at V =-4.5V) 10 ohm DS(ON) GS General Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Video monitor Power management Absolute Maxi

RoHS COMPLIANT BSS84W P-Channel Enhancement Mode Field Effect Transistor Product Summary V -60 V DS I -0.17 A D R ( at V =-10V) 8 ohm DS(ON) GS R ( at V =-4.5V) 9.9 ohm DS(ON) GS General Description Trench Power LV MOSFET technology Low R DS(ON) Low Gate Charge Applications Video monitor Power management Absolute Ma

Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW FEATURES Low On-Resistance. Pb Low Gate Threshold Voltage. Lead-free Low Input Capacitance. Fast Switching Speed. Low Input/Output Leakage. Complementary Pair. SOT-363 ORDERING INFORMATION Type No. Marking Package Code BSS8402DW KNP SOT-363 MAXIMUM RATING Total Device @ Ta

P-Channel Enhancement Mode Field Effect Transistor FEATURES Low On-Resistance Pb Low Gate Threshold Voltage. Lead-free Low Input Capacitance. Fast Switching Speed. Available in Lead Free Version. APPLICATIONS P-channel enhancement mode effect transistor. SOT-323 ORDERING INFORMATION Type No. Marking Package Code K84 SOT-323 MAXIMUM RATING