2SK1024 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK1024
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 60 W
Предельно допустимое напряжение сток-исток |Uds|: 900 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 3.5 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 65 ns
Выходная емкость (Cd): 80 pf
Сопротивление сток-исток открытого транзистора (Rds): 5.5 Ohm
Тип корпуса: TO220
2SK1024 Datasheet (PDF)
2sk1024.pdf
isc N-Channel MOSFET Transistor 2SK1024DESCRIPTIONDrain Current I =3.5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
2sk1023.pdf
isc N-Channel MOSFET Transistor 2SK1023DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
2sk1022.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GSV Gat
2sk1020.pdf
isc N-Channel MOSFET Transistor 2SK1020DESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol
2sk1029.pdf
isc N-Channel MOSFET Transistor 2SK1029FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
2sk1021.pdf
isc N-Channel MOSFET Transistor 2SK1021DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Volta
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