2SK1024. Аналоги и основные параметры
Наименование производителя: 2SK1024
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 900 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 65 ns
Cossⓘ - Выходная емкость: 80 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 5.5 Ohm
Тип корпуса: TO220
Аналог (замена) для 2SK1024
- подборⓘ MOSFET транзистора по параметрам
2SK1024 даташит
..1. Size:200K inchange semiconductor
2sk1024.pdf 

isc N-Channel MOSFET Transistor 2SK1024 DESCRIPTION Drain Current I =3.5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra
8.4. Size:200K inchange semiconductor
2sk1023.pdf 

isc N-Channel MOSFET Transistor 2SK1023 DESCRIPTION Drain Current I =4A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain
8.5. Size:60K inchange semiconductor
2sk1022.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GS V Gat
8.6. Size:223K inchange semiconductor
2sk1020.pdf 

isc N-Channel MOSFET Transistor 2SK1020 DESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Vol
8.7. Size:257K inchange semiconductor
2sk1029.pdf 

isc N-Channel MOSFET Transistor 2SK1029 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Static Drain-Source On-Resistance R = 0.29 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos
8.8. Size:200K inchange semiconductor
2sk1021.pdf 

isc N-Channel MOSFET Transistor 2SK1021 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Volta
Другие MOSFET... 2SJ374
, 2SK1009
, 2SK1010
, 2SK1011
, 2SK1012
, 2SK1013
, 2SK1014
, 2SK1023
, 20N50
, 2SK1073
, 2SK1081
, 2SK1134
, 2SK1142
, 2SK1143
, 2SK1212
, 2SK1319
, 2SK1320
.
History: SML4030AN