2SK1024
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK1024
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 60
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 900
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 3.5
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 65
ns
Cossⓘ - Выходная емкость: 80
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5.5
Ohm
Тип корпуса:
TO220
- подбор MOSFET транзистора по параметрам
2SK1024
Datasheet (PDF)
..1. Size:200K inchange semiconductor
2sk1024.pdf 

isc N-Channel MOSFET Transistor 2SK1024DESCRIPTIONDrain Current I =3.5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra
8.4. Size:200K inchange semiconductor
2sk1023.pdf 

isc N-Channel MOSFET Transistor 2SK1023DESCRIPTIONDrain Current I =4A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain
8.5. Size:60K inchange semiconductor
2sk1022.pdf 

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1022 DESCRIPTION Drain Current ID=2.5A@ TC=25 Drain Source Voltage- : VDSS=900V(Min) Fast Switching Speed APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER V Drain-Source Voltage (V =0) 900 V DSS GSV Gat
8.6. Size:223K inchange semiconductor
2sk1020.pdf 

isc N-Channel MOSFET Transistor 2SK1020DESCRIPTIONDrain Current I =30A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol
8.7. Size:257K inchange semiconductor
2sk1029.pdf 

isc N-Channel MOSFET Transistor 2SK1029FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.29(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos
8.8. Size:200K inchange semiconductor
2sk1021.pdf 

isc N-Channel MOSFET Transistor 2SK1021DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Volta
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