Справочник MOSFET. 2SK1385

 

2SK1385 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK1385
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 230 ns
   Cossⓘ - Выходная емкость: 200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.5 Ohm
   Тип корпуса: TO-3PML

 Аналог (замена) для 2SK1385

 

 

2SK1385 Datasheet (PDF)

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2sk1385.pdf

2SK1385
2SK1385

isc N-Channel MOSFET Transistor 2SK1385DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 800 VDSS GS

 0.1. Size:175K  fuji
2sk1385-01r.pdf

2SK1385
2SK1385

 8.1. Size:442K  toshiba
2sk1381.pdf

2SK1385
2SK1385

2SK1381 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOSIII) 2SK1381 Relay Drive, Motor Drive and DC-DC Converter Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 25 m (typ.) DS (ON) High forward transfer admittance : |Y | = 33 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-mode

 8.2. Size:371K  toshiba
2sk1380.pdf

2SK1385
2SK1385

www.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.comwww.DataSheet4U.com

 8.3. Size:389K  toshiba
2sk1382.pdf

2SK1385
2SK1385

2SK1382 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSIII) 2SK1382 Relay Drive, Motor Drive and DC-DC Converter Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 15 m (typ.) DS (ON) High forward transfer admittance : |Y | = 47 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhancement-m

 8.4. Size:171K  fuji
2sk1386-01.pdf

2SK1385
2SK1385

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2sk1384r.pdf

2SK1385
2SK1385

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2sk1388.pdf

2SK1385
2SK1385

N-channel MOS-FET2SK1388F-III Series 30V 0,022 35A 60W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

 8.7. Size:64K  inchange semiconductor
2sk1384.pdf

2SK1385
2SK1385

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1384 DESCRIPTION Drain Current ID=5A@ TC=25 Drain Source Voltage- : VDSS=800V(Min) APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 800 V VGS Gate-Source Voltage 20 V ID D

 8.8. Size:203K  inchange semiconductor
2sk1386.pdf

2SK1385
2SK1385

isc N-Channel MOSFET Transistor 2SK1386DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor

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