2SK1563 - аналоги, параметры транзистора - Справочник транзисторов

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isc N-Channel MOSFET Transistor 2SK1563 DESCRIPTION Drain Current I =12A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAX

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2SK1566, 2SK1567 Silicon N Channel MOS FET REJ03G0953-0200 (Previous ADE-208-1293) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name T

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isc N-Channel MOSFET Transistor 2SK1569 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V =300V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for high efficiency switch mode power supply. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

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isc N-Channel MOSFET Transistor 2SK1565 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXI