DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1582SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1582, N-channel vertical type MOS FET, is a 2.8 0.2switching device which can be driven directly by the output of +0.10.65 0.151.5ICs having a 5 V power source. The 2SK1582 has excellent switching characteristics and is 2suitable for use as a

SMD Type MOSFETN-Channel MOSFET2SK1582SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 0.2 A1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 5 (VGS = 4V)+0.11.9-0.1 RDS(ON) 3 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30

SMD Type MOSFETN-Channel MOSFET2SK1582SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 30V ID = 0.2 A1 2 RDS(ON) 5 (VGS = 4V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 3 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage V

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1580SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1580 is an N -channel vertical type MOS FET which 2.10.1can be driven by 2.5 V power supply. 1.250.1 As the 2SK1580 is driven by low voltage and does not require consideration of driving current, it is suitable for appliance including VCR cameras and

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1581SWITCHING N-CHANNEL MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1581, N-channel vertical type MOS FET, can be 2.8 0.2driven by 2.5 V power supply. +0.10.65 0.151.5 As the 2SK1581 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances 2including VCR cam

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1584N-CHANNEL MOS FETFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit : mm) The 2SK1584 is a switching device which can be driven directlyby a 5-V power source.4.50.1 ElectrodeConnection The 2SK1584 features a low on-state resistance and excellent1.50.11.60.2 1.Sourceswitching characteristics, and is suitable for applicati

SMD Type MOSFETN-Channel MOSFET2SK15881.70 0.1 Features VDS (V) = 16V ID = 3 A0.42 0.10.46 0.1 RDS(ON) 0.3 (VGS = 4V) RDS(ON) 0.5 (VGS = 2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 3A Puls

SMD Type MOSFETN-Channel MOSFET2SK1589SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 0.1 A1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 30 (VGS = 4V)+0.11.9 -0.2 RDS(ON) 25 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Volta

SMD Type MOSFETN-Channel MOSFET2SK15841.70 0.1 Features VDS (V) = 30V ID = 0.5 A0.42 0.10.46 0.1 RDS(ON) 1.5 (VGS = 10V) RDS(ON) 2 (VGS = 4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Continuous Drain Current ID 0.5A Pul

SMD Type MOSFETN-Channel MOSFET2SK15831.70 0.1 Features VDS (V) = 16V ID = 0.5 A0.42 0.1 RDS(ON) 2 (VGS = 2.5V) 0.46 0.1 RDS(ON) 1.5 (VGS = 4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 0.5A Pul

SMD Type MOSFETN-Channel MOSFET2SK15871.70 0.1 Features VDS (V) = 16V ID = 2 A RDS(ON) 0.5 (VGS = 4V)0.42 0.10.46 0.1 RDS(ON) 0.8 (VGS = 2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 2A Puls

SMD Type MOSFETN-Channel MOSFET2SK15851.70 0.1 Features VDS (V) = 16V ID = 1 A0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V) RDS(ON) 1.2 (VGS = 2.5V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16V Gate-Source Voltage VGS 16 Continuous Drain Current ID 1A Pulsed

SMD Type MOSFETN-Channel MOSFET2SK15861.70 0.1 Features VDS (V) = 30V ID = 1 A RDS(ON) 0.6 (VGS = 10V)0.42 0.10.46 0.1 RDS(ON) 1 (VGS = 4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1A Pulsed

SMD Type MOSFETN-Channel MOSFET2SK1581SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS (V) = 16V ID = 0.2 A1 2 RDS(ON) 5 (VGS = 2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.1 RDS(ON) 3 (VGS = 4V) 1.9 -0.21. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage V

SMD Type MOSFETN-Channel MOSFET2SK1589SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 100V ID = 0.1 A1 2 RDS(ON) 30 (VGS = 4V) +0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 25 (VGS = 10V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 1

SMD Type MOSFETN-Channel MOSFET2SK1581SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features VDS (V) = 16V ID = 0.2 A1 2 RDS(ON) 5 (VGS = 2.5V) +0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1 RDS(ON) 3 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 16

2SK1588www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.022 at VGS = 4.5 V 6.8RoHS30 10 nC COMPLIANTAPPLICATIONS0.027 at VGS = 2.5 V 6.0 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

2SK1589-T1Bwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition100 2.8 at VGS = 10 V Low Threshold: 2 V (typ.)260 Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output Leakage TrenchFET Power MOSFET Compliant to RoHS Directive 20