2SK1678 - аналоги, параметры транзистора - Справочник транзисторов

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isc N-Channel MOSFET Transistor 2SK1678 DESCRIPTION Drain Current I =16A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high Current, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 500 V DSS GS

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2SK1671 Silicon N Channel MOS FET REJ03G0967-0200 (Previous ADE-208-1312) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor drive Outline RENESAS Package code PRSS0004ZE-A (Package nam

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isc N-Channel MOSFET Transistor 2SK1679 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high Current, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS