2SK804 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK804
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 100 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
Тип корпуса: TO-3PF
2SK804 Datasheet (PDF)
2sk804.pdf
isc N-Channel MOSFET Transistor 2SK804DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 150
l2sk801lt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET310 mAmps, 60 VoltsL2SK801LT1GNChannel SOT233 Pb-Free Package is Available.12CASE 318, STYLE 21MAXIMUM RATINGSSOT 23 (TO236AB)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc 310 mAMPSDrain Current 60 VOLTS Continuous TC = 25C (Note 1.) ID 3
2sk805.pdf
isc N-Channel MOSFET Transistor 2SK805DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXIMUM
2sk809a.pdf
isc N-Channel MOSFET Transistor 2SK809ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk807.pdf
isc N-Channel MOSFET Transistor 2SK807DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk808a.pdf
isc N-Channel MOSFET Transistor 2SK808ADESCRIPTIONDrain Current I =1A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk806.pdf
isc N-Channel MOSFET Transistor 2SK806DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk803.pdf
isc N-Channel MOSFET Transistor 2SK803DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =160V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 160 VDSS GSV Gate-Source
2sk808.pdf
isc N-Channel MOSFET Transistor 2SK808DESCRIPTIONDrain Current I =1A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
2sk809.pdf
isc N-Channel MOSFET Transistor 2SK809DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918