2SK846 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK846 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 900 V DSS GS

isc N-Channel MOSFET Transistor 2SK843 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 60 V DSS GS V Gate-Source

isc N-Channel MOSFET Transistor 2SK845 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS GS

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK849 DESCRIPTION Drain Current ID=40A@ TC=25 Drain Source Voltage- VDSS=60V(Min) APPLICATIONS Designed especially for low voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATIN

isc N-Channel MOSFET Transistor 2SK844 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 100 V DSS GS V Gate-Source