45N06 - описание и поиск аналогов

isc N-Channel MOSFET Transistor 45N06 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Static Drain-Source On-Resistance R = 0.04 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies,converters,AC and DC motor controls ABSOLUTE

Preliminary Data Sheet NP45N06VUK, NP45N06PUK R07DS0953EJ0100 60 V 45 A N-channel Power MOS FET Rev.1.00 Application Automotive Nov 20, 2012 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features Super low on-state resistance RDS(on) = 9.6 m MAX. (VGS = 10 V, ID = 23 A) Low Ciss Ci

RFG45N06, RFP45N06, RF1S45N06SM Data Sheet January 2002 45A, 60V, 0.028 Ohm, N-Channel Power Features MOSFETs 45A, 60V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.028 power field effect transistors. They are advanced power Temperature Compensating PSPICE Model MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the

IPB45N06S3-16 IPI45N06S3-16, IPP45N06S3-16 OptiMOS -T2 Power-Transistor Product Summary V 55 V DS R (SMD version) 15.4 m DS(on),max I 45 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanch

IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 9.2 m DS(on),max I 45 A D Features N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB45N06S4-09 PG-TO263-

IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 7.9 m DS(on),max I 45 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

NTP45N06L, NTB45N06L Power MOSFET 45 Amps, 60 Volts Logic Level, N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 45 AMPERES, 60 VOLTS circuits. RDS(on) = 28 mW Features N-Channel Higher Current Rating D Lower RDS(on) Lower VDS(on) Lower Capa

NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features Higher Current Rating 45 AMPERES, 60 VOLTS Lower RDS(on) RDS(on) = 26 mW Lower VDS(on) Lower Capacitances N-Channel Lower

NTP45N06L, NTB45N06L Power MOSFET 45 Amps, 60 Volts Logic Level, N-Channel TO-220 and D2PAK http //onsemi.com Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge 45 AMPERES, 60 VOLTS circuits. RDS(on) = 28 mW Features N-Channel Higher Current Rating D Lower RDS(on) Lower VDS(on) Lower Capa

NTB45N06, NTBV45N06 Power MOSFET 45 Amps, 60 Volts N-Channel D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features Higher Current Rating 45 AMPERES, 60 VOLTS Lower RDS(on) RDS(on) = 26 mW Lower VDS(on) Lower Capacitances N-Channel Lower Total Gat

RFP45N06LE, RF1S45N06LESM Data Sheet October 1999 File Number 4076.2 45A, 60V, 0.028 Ohm, Logic Level Features N-Channel Power MOSFETs 45A, 60V These are N-Channel enhancement mode power MOSFETs rDS(ON) = 0.028 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approaching those

Analog Power AM45N06-16D N-Channel 60-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) m( ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 16 @ VGS = 4.5V 46 converters and power management in portable and 60 19 @ VGS = 2.5V 42 batt

GOFORD GT45N06 General Features RDS(ON) RDS(ON) VDSS ID @10V (typ) @4.5V (typ) 60V 6.8 m 9.5m 45A Split Gate Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications RoHS Compliant Top View Applications D D D D D D Synchronus Rectification in DC/DC and AC/DC D Pin1 D Converters S G

N-Channel MOSFET Shantou Huashan Electronic Devices Co.,Ltd. HFP45N06 APPLICATIONSL TO-220 Low Voltage high-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 175 1 G Tj Operating Junction Temperature 150 2 D PD Allowable Power Dissipation Tc

DH045N06/DH045N06F/DH045N06I DH045N06E/DH045N06B/DH045N06D 145A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 4.5m DS(on) (TYP) standard. 1 3 S I = 145A D 2 Features Low on resi

Datasheet 6.0m , 45V, N-Channel Power MOSFET SRT045N060H General Description Symbol The Sanrise SRT045N060H is a low voltage Drain 5,6,7,8 power MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superio

December 2014 BVDSS = 60 V RDS(on) typ = 3.7m HRP45N06K ID = 150 A 60V N-Channel Trench MOSFET TO-220 FEATURES Originative New Design Superior Avalanche Rugged Technology 1 2 3 Excellent Switching Characteristics 1.Gate 2. Drain 3. Source Unrivalled Gate Charge 120 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) 3.7 m (Typ.

Silicon N-Channel Power MOSFET R CS45N06 A4 anGeneral Description VDSS 60 V CS45N06 A4 the silicon N-channel Enhanced ID 45 A VDMOSFETs, is obtained by the high density Trench RDS(ON)Typ 12 m technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This device is suitable for use as a load switch and PWM appli

NTB45N06LG www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a, e Qg (Max) Definition Surface Mount 0.023 at VGS = 10 V 50 60 66 nC Available in Tape and Reel 0.027 at VGS = 4.5 V 40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS D

TTB145N06A,TTP145N06A Wuxi Unigroup Microelectronics CO.,LTD. 60V N-Channel Trench MOSFET General Description Product Summary Trench Power technology VDS 60V Low RDS(ON) ID (at VGS =10V) 145A Low Gate Charge RDS(ON) (at VGS =10V)

HM45N06D N-Channel Enhancement Mode Power MOSFET Description The HM45N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =35A RDS(ON)