MS23P39 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MS23P39
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 9 ns
Cossⓘ - Выходная емкость: 75 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.057 Ohm
Тип корпуса: SOT-23
Аналог (замена) для MS23P39
MS23P39 Datasheet (PDF)
ms23p39.pdf

MS23P39P-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)57 @ VGS = -4.5V -3.9 Low thermal impedance -3089 @ VGS = -2.5V -3.2 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM RATINGS (T
ms23p01.pdf

Bruckewell Technology Corp., Ltd. MS23P01 P-Channel 20-V (D-S) MOSFET Key Features: These miniature surface mount MOSFETs utilize a SOT23 Package high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as compute
ms23p25.pdf

MS23P25 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl
ms23p21.pdf

MS23P21 P-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, and PCMCIA cards, cellular and cordl
Другие MOSFET... MS20N04NE , MS20N06 , MS23N22 , MS23N26 , MS23N36 , MS23P01 , MS23P21 , MS23P25 , IRFP250 , MS34N34 , MS3N80 , MS40N06 , MS44P15 , MS4541C , MS48P25 , MS49P63 , MS4N60 .
History: PHB145NQ06T | 2SJ661-DL-E
History: PHB145NQ06T | 2SJ661-DL-E



Список транзисторов
Обновления
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
2sc1678 | irf4115 | 2sc828 replacement | 2sd669 datasheet | c102 transistor | bt152 datasheet | 2sa1302 datasheet | mpsa13 transistor equivalent