MS50N06. Аналоги и основные параметры
Наименование производителя: MS50N06
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 50 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
Тип корпуса: TO-220
Аналог (замена) для MS50N06
- подборⓘ MOSFET транзистора по параметрам
MS50N06 даташит
ms50n06.pdf
MS50N06 N-Channel Enhancement Mode Power MOSFET Description The MS50N60 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features Low On Resistance Sim
hms50n12da.pdf
N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =120V,ID =50A frequency switching performance. Both conduction and RDS(ON)=10m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS(ON)=12m (typical) @ VG
hms50n15ld.pdf
HMS50N15LD N-Channel Super Trench Power MOSFET Description The HMS50N15LD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous recti
Другие MOSFET... MS40N06 , MS44P15 , MS4541C , MS48P25 , MS49P63 , MS4N60 , MS4N60C , MS4N65 , 5N60 , MS5N50 , MS5N50-A , MS5N60 , MS60P02NE , MS69N68 , MS6N40 , MS6N80 , MS6N90 .
History: ELM5H1072A | HM19N40 | EM6K1
History: ELM5H1072A | HM19N40 | EM6K1
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Список транзисторов
Обновления
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