Справочник MOSFET. MSAER12N50A

 

MSAER12N50A Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MSAER12N50A
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 190 ns
   Cossⓘ - Выходная емкость: 600 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.4 Ohm
   Тип корпуса: TO-276AB
 

 Аналог (замена) для MSAER12N50A

   - подбор ⓘ MOSFET транзистора по параметрам

 

MSAER12N50A Datasheet (PDF)

 ..1. Size:44K  microsemi
msaer12n50a msafr12n50a.pdfpdf_icon

MSAER12N50A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER12N50AFAX: (714) 966-5256MSAFR12N50AFeatures500 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)12 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability400 m Hermetically sealed, surface mount power package Low p

 9.1. Size:154K  microsemi
msaer57n10a.pdfpdf_icon

MSAER12N50A

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAER57N10AFeatures 100 Volts MOSKEYTM - Mosfet and Schottky in a single package 57 Amps Ultra Low On-Resistance 175C Operating Temperature 25 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package N-CHANNEL

 9.2. Size:42K  microsemi
msaer30n20a msafr30n20a.pdfpdf_icon

MSAER12N50A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER30N20AFAX: (714) 966-5256MSAFR30N20AFeatures200 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)30 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability85 m Hermetically sealed, surface mount power package Low pa

 9.3. Size:34K  microsemi
38n10a msaer38n10a msafr38n10a.pdfpdf_icon

MSAER12N50A

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER38N10AFAX: (714) 966-5256MSAFR38N10AFeatures100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)38 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability55 m Hermetically sealed, surface mount power package Low pa

Другие MOSFET... MS7N80 , MS85N06 , MS8N50 , MS8N60 , MS99N45 , MS9N20E , MS9N90 , MSA4P21 , 8N60 , MSAER30N20A , MSAER38N10A , MSAER57N10A , MSAEZ50N10A , MSAFR12N50A , MSAFR30N20A , MSAFR38N10A , MSAFX10N90A .

History: IRLML5203PBF-1 | S80N10R | IRLB3813PBF

 

 
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