MSAER38N10A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MSAER38N10A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 300 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 190 ns
Cossⓘ - Выходная емкость: 1100 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
Тип корпуса: TO-276AB
- подбор MOSFET транзистора по параметрам
MSAER38N10A Datasheet (PDF)
38n10a msaer38n10a msafr38n10a.pdf

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER38N10AFAX: (714) 966-5256MSAFR38N10AFeatures100 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)38 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability55 m Hermetically sealed, surface mount power package Low pa
msaer30n20a msafr30n20a.pdf

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER30N20AFAX: (714) 966-5256MSAFR30N20AFeatures200 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)30 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability85 m Hermetically sealed, surface mount power package Low pa
msaer12n50a msafr12n50a.pdf

2830 S. Fairview St.Santa Ana, CA 92704PH: (714) 979-8220 MSAER12N50AFAX: (714) 966-5256MSAFR12N50AFeatures500 Volts Ultrafast rectifier in parallel with the body diode (MSAE type only)12 Amps Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability400 m Hermetically sealed, surface mount power package Low p
msaer57n10a.pdf

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MSAER57N10AFeatures 100 Volts MOSKEYTM - Mosfet and Schottky in a single package 57 Amps Ultra Low On-Resistance 175C Operating Temperature 25 m Increased Unclamped Inductive Switching (UIS) capability Hermetically sealed, surface mount power package N-CHANNEL
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: CEU02N7G-1 | IPN80R1K2P7 | STW12NM60N | TPU65R600C | HM45P03K | IRLR3410PBF | APT6070AN
History: CEU02N7G-1 | IPN80R1K2P7 | STW12NM60N | TPU65R600C | HM45P03K | IRLR3410PBF | APT6070AN



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