MTP20N15EG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MTP20N15EG
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 112 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 39.1 nC
trⓘ - Время нарастания: 77 ns
Cossⓘ - Выходная емкость: 332 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.13 Ohm
Тип корпуса: TO-220AB
Аналог (замена) для MTP20N15EG
MTP20N15EG Datasheet (PDF)
mtp20n15eg.pdf
MTP20N15EPower MOSFET20 Amps, 150 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power converters20 AMPERESand PWM motor controls, these dev
mtp20n15e-d.pdf
MTP20N15EPower MOSFET20 Amps, 150 VoltsN-Channel TO-220This Power MOSFET is designed to withstand high energy in theavalanche and commutation modes. The energy efficient design alsohttp://onsemi.comoffers a drain-to-source diode with a fast recovery time. Designed forlow voltage, high speed switching applications in power converters20 AMPERESand PWM motor controls, these dev
mtp20n06v.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N06V/DDesigner's Data SheetMTP20N06VTMOS VPower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETTMOS V is a new technology designed to achieve an onresis-20 AMPEREStance area product about onehalf that of standard MOSFETs. This60 VOLTSnew technology more than
mtp20n20e.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N20E/DDesigner's Data SheetMTP20N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high20 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffi
mtp20n20erev2x.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP20N20E/DDesigner's Data SheetMTP20N20ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis advanced TMOS EFET is designed to withstand high20 AMPERESenergy in the avalanche and commutation modes. The new energy200 VOLTSeffi
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918