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MTP2N60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTP2N60E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 13 nC
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 9.2 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 3.8 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для MTP2N60E

 

 

MTP2N60E Datasheet (PDF)

 ..1. Size:190K  motorola
 mtp2n60e.pdf

MTP2N60E MTP2N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N60E/DDesigner's Data SheetMTP2N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

 ..2. Size:106K  njs
 mtp2n60e.pdf

MTP2N60E MTP2N60E

 0.1. Size:219K  motorola
 mtp2n60erev2a.pdf

MTP2N60E MTP2N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N60E/DDesigner's Data SheetMTP2N60ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without600 VOLTSdegra

 7.1. Size:56K  motorola
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MTP2N60E

 9.1. Size:107K  1
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MTP2N60E MTP2N60E

 9.2. Size:217K  motorola
 mtp2n40erev0bx.pdf

MTP2N60E MTP2N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

 9.3. Size:244K  motorola
 mtp2n50e.pdf

MTP2N60E MTP2N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N50E/DDesigner's Data SheetMTP2N50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 9.4. Size:238K  motorola
 mtp2n2222a p2n2222a.pdf

MTP2N60E MTP2N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2222A/DAmplifier TransistorsNPN SiliconP2N2222ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 40 Vdc 3CollectorBase Voltage VCBO 75 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 6.0 VdcTO92 (TO226AA)Collector Current Conti

 9.5. Size:240K  motorola
 mtp2n2907a.pdf

MTP2N60E MTP2N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby P2N2907A/DAmplifier TransistorPNP SiliconP2N2907ACOLLECTOR12BASE3EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO 60 Vdc 3CollectorBase Voltage VCBO 60 VdcCASE 2904, STYLE 17EmitterBase Voltage VEBO 5.0 VdcTO92 (TO226AA)Collector Current

 9.6. Size:140K  motorola
 mtp2n40e.pdf

MTP2N60E MTP2N60E

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2N40E/DDesigner's Data SheetMTP2N40ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorNChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without400 VOLTSdegra

 9.7. Size:157K  fairchild semi
 mtp2n45.pdf

MTP2N60E MTP2N60E

 9.8. Size:93K  njs
 mtp2n80.pdf

MTP2N60E MTP2N60E

 9.9. Size:107K  njs
 mtp2n18 mtp2n20.pdf

MTP2N60E MTP2N60E

 9.10. Size:95K  njs
 mtm2n85 mtm2n90 mtp2n90.pdf

MTP2N60E MTP2N60E

 9.11. Size:786K  njs
 mtp2n35 mtp2n40.pdf

MTP2N60E MTP2N60E

 9.12. Size:26K  no
 mtp2n50e.pdf

MTP2N60E MTP2N60E

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP2N50E PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain Source Voltage VDSS 500 Vdc Drain Gate Voltage VDGR 500 Vdc Drain Current Continuous ID 2

 9.13. Size:204K  inchange semiconductor
 mtp2n50.pdf

MTP2N60E MTP2N60E

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor MTP2N50FEATURESWith low gate drive requirementsEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 500 VDSSV Gate-S

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History: FDS4465

 

 
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