Справочник MOSFET. MTP2P50

 

MTP2P50 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: MTP2P50
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 6 Ohm
   Тип корпуса: TO-220AB

 Аналог (замена) для MTP2P50

 

 

MTP2P50 Datasheet (PDF)

 0.1. Size:198K  motorola
mtp2p50e.pdf

MTP2P50
MTP2P50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2P50E/DDesigner's Data SheetMTP2P50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 0.2. Size:230K  motorola
mtp2p50erev1x.pdf

MTP2P50
MTP2P50

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTP2P50E/DDesigner's Data SheetMTP2P50ETMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorPChannel EnhancementMode Silicon GateTMOS POWER FETThis high voltage MOSFET uses an advanced termination2.0 AMPERESscheme to provide enhanced voltageblocking capability without500 VOLTSdegra

 0.3. Size:184K  onsemi
mtp2p50eg.pdf

MTP2P50
MTP2P50

MTP2P50EPower MOSFET2 Amps, 500 VoltsP-Channel TO-220This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradingperformance over time. In addition, this Power MOSFET is designed http://onsemi.comto withstand high energy in the avalanche and commutation modes.The energy efficient design also offers a drain-to-sourc

 0.4. Size:187K  onsemi
mtp2p50e-d.pdf

MTP2P50
MTP2P50

MTP2P50EPower MOSFET2 Amps, 500 VoltsP-Channel TO-220This high voltage MOSFET uses an advanced termination schemeto provide enhanced voltage-blocking capability without degradingperformance over time. In addition, this Power MOSFET is designed http://onsemi.comto withstand high energy in the avalanche and commutation modes.The energy efficient design also offers a drain-to-sourc

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History: OSG95R1K2FF

 

 
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