Справочник MOSFET. MVGSF1N02L

 

MVGSF1N02L Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MVGSF1N02L
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 0.75 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 1 ns
   Cossⓘ - Выходная емкость: 120 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.09 Ohm
   Тип корпуса: SOT-23
 

 Аналог (замена) для MVGSF1N02L

   - подбор ⓘ MOSFET транзистора по параметрам

 

MVGSF1N02L Datasheet (PDF)

 ..1. Size:154K  onsemi
mgsf1n02l mvgsf1n02l.pdfpdf_icon

MVGSF1N02L

MGSF1N02L, MVGSF1N02LPower MOSFET750 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurewww.onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typical750 mAMPS, 20 VOLTSapplications are dc-dc converters and power management in portableRDS(on) = 90 mWand batte

 ..2. Size:101K  onsemi
mvgsf1n02l mvgsf1n02lt1g.pdfpdf_icon

MVGSF1N02L

MGSF1N02L, MVGSF1N02LPower MOSFET750 mAmps, 20 VoltsN-Channel SOT-23These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typical750 mAMPS, 20 VOLTSapplications are dc-dc converters and power management in portableRDS(on) = 90 mWand ba

 6.1. Size:127K  onsemi
mgsf1n03l mvgsf1n03l.pdfpdf_icon

MVGSF1N02L

MGSF1N03L, MVGSF1N03LMOSFET Single,N-Channel, SOT-2330 V, 2.1 AThese miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealwww.onsemi.comfor use in space sensitive power management circuitry. Typicalapplications are dc-dc converters and power management in portableV(BR)DSS RDS(on) TYP ID MAXand battery-powered

 6.2. Size:114K  onsemi
mvgsf1n03l mvgsf1n03lt1g.pdfpdf_icon

MVGSF1N02L

MGSF1N03L, MVGSF1N03LPower MOSFET30 V, 2.1 A, Single N-Channel, SOT-23These miniature surface mount MOSFETs low RDS(on) assureminimal power loss and conserve energy, making these devices idealfor use in space sensitive power management circuitry. Typicalhttp://onsemi.comhttp://onsemi.comapplications are dc-dc converters and power management in portableand battery-powered produ

Другие MOSFET... MTW45N10E , MTW4N80E , MTW6N60E , MTW7N80E , MTW8N50E , MTY100N10E , MVB50P03HDL , MVB50P03HDLT4G , IRFZ24N , MVGSF1N02LT1G , MVGSF1N03L , MVGSF1N03LT1G , MVMBF0201NL , MVSF2N02EL , MVSF2N02ELT1G , MX2N4091 , MX2N4092 .

History: ELM34423AA | APT18M80S | STD38NH02L-1 | IRF4905LPBF | MSD4N70 | 2SK3605-01 | MTP2311V8

 

 
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