125N10T - описание и поиск аналогов

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 125N10T DESCRIPTION Drain Current I =120A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R = 5.8m (Max)@V = 10V; I = 40A DS(on) GS D Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switch mode power su

GT125N10 GOFORD General Description GT125N10 use advanced SFGMOSTM RDS(ON) technology to provide low R , low gate DS(ON) VDSS ID @10V (Typ.) charge, fast switching and excellent avalanche characteristics. This device is specially designed 100V 130 A 4.1m to get better ruggedness and suitable to use in motor control applications. Applications Features Consu

SINGLE FIG.SINGLE PHASE HALF WAVE 60Hz DERATING CURVE FIG. 2 MAXIMUM NON- T1 FORWARD CURRENT AMBIENT TEMPERATURE ( ) 1 2 5 10 1 25 50 75 10 20 150 175 0.00 0.2 0.4 0.6 4 100 125 100 HY125N10T 100V / 125A 100V, RDS(ON)=5.8mW@VGS=10V, ID=40A N-Channel Enhancement Mode MOSFET Features TO-220AB Low On-State Resistance Excellent Gate Charge x RDS(ON) Product

WML125N12LG2 120V N-Channel Enhancement Mode Power MOSFET Description WML125N12LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. GDS Features TO-220F V = 120V, I = 35A