Справочник MOSFET. 2SK630

 

2SK630 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: 2SK630
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 160 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.5 Ohm
   Тип корпуса: TO3P
     - подбор MOSFET транзистора по параметрам

 

2SK630 Datasheet (PDF)

 ..1. Size:242K  inchange semiconductor
2sk630.pdfpdf_icon

2SK630

isc N-Channel MOSFET Transistor 2SK630FEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri

 9.1. Size:242K  inchange semiconductor
2sk632.pdfpdf_icon

2SK630

isc N-Channel MOSFET Transistor 2SK632FEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

 9.2. Size:241K  inchange semiconductor
2sk631.pdfpdf_icon

2SK630

isc N-Channel MOSFET Transistor 2SK631FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.3. Size:242K  inchange semiconductor
2sk634.pdfpdf_icon

2SK630

isc N-Channel MOSFET Transistor 2SK634FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: BSC096N10LS5 | IPD079N06L3G | FQD10N20CTF | 2SJ609 | PE528BA | IRF353 | CSD17575Q3

 

 
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