2SK636 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK636
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 80 W
Предельно допустимое напряжение сток-исток |Uds|: 500 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 5 V
Максимально допустимый постоянный ток стока |Id|: 8 A
Максимальная температура канала (Tj): 150 °C
Сопротивление сток-исток открытого транзистора (Rds): 1.4 Ohm
Тип корпуса: TO3P
2SK636 Datasheet (PDF)
2sk636.pdf
isc N-Channel MOSFET Transistor 2SK636FEATURESDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr
2sk632.pdf
isc N-Channel MOSFET Transistor 2SK632FEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr
2sk630.pdf
isc N-Channel MOSFET Transistor 2SK630FEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri
2sk631.pdf
isc N-Channel MOSFET Transistor 2SK631FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d
2sk634.pdf
isc N-Channel MOSFET Transistor 2SK634FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d
2sk637.pdf
isc N-Channel MOSFET Transistor 2SK637FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d
2sk635.pdf
isc N-Channel MOSFET Transistor 2SK635FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr
2sk638.pdf
isc N-Channel MOSFET Transistor 2SK638FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr
2sk633.pdf
isc N-Channel MOSFET Transistor 2SK633FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operatioDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
