Справочник MOSFET. 2SK638

 

2SK638 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK638
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 80 W
   Предельно допустимое напряжение сток-исток |Uds|: 800 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 3 A
   Максимальная температура канала (Tj): 150 °C
   Сопротивление сток-исток открытого транзистора (Rds): 5 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для 2SK638

 

 

2SK638 Datasheet (PDF)

 ..1. Size:237K  inchange semiconductor
2sk638.pdf

2SK638
2SK638

isc N-Channel MOSFET Transistor 2SK638FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

 9.1. Size:242K  inchange semiconductor
2sk632.pdf

2SK638
2SK638

isc N-Channel MOSFET Transistor 2SK632FEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

 9.2. Size:242K  inchange semiconductor
2sk630.pdf

2SK638
2SK638

isc N-Channel MOSFET Transistor 2SK630FEATURESDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri

 9.3. Size:241K  inchange semiconductor
2sk631.pdf

2SK638
2SK638

isc N-Channel MOSFET Transistor 2SK631FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.4. Size:242K  inchange semiconductor
2sk634.pdf

2SK638
2SK638

isc N-Channel MOSFET Transistor 2SK634FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.5. Size:242K  inchange semiconductor
2sk637.pdf

2SK638
2SK638

isc N-Channel MOSFET Transistor 2SK637FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.6. Size:242K  inchange semiconductor
2sk635.pdf

2SK638
2SK638

isc N-Channel MOSFET Transistor 2SK635FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

 9.7. Size:242K  inchange semiconductor
2sk636.pdf

2SK638
2SK638

isc N-Channel MOSFET Transistor 2SK636FEATURESDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

 9.8. Size:241K  inchange semiconductor
2sk633.pdf

2SK638
2SK638

isc N-Channel MOSFET Transistor 2SK633FEATURESDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operatioDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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