Справочник MOSFET. 2SK750

 

2SK750 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: 2SK750
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 100 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.08 Ohm
   Тип корпуса: TO3P

 Аналог (замена) для 2SK750

 

 

2SK750 Datasheet (PDF)

 ..1. Size:235K  inchange semiconductor
 2sk750.pdf

2SK750 2SK750

isc N-Channel MOSFET Transistor 2SK750DESCRIPTIONDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 1

 9.1. Size:33K  panasonic
 2sk758.pdf

2SK750 2SK750

Power F-MOS FETs 2SK7582SK758Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Low ON-resistance RDS(on) : RDS(on) = 0.45(typ) 5.5 0.2 2.7 0.2High-speed switching : tf = 45ns(typ)No secondary breakdown3.1 0.1 ApplicationsDC-DC converter1.3 0.2 1.4 0.1Non-contact relaySolenoid drive+0.20.5 -0.10.8 0.1Motor drive2.54 0.25

 9.2. Size:233K  inchange semiconductor
 2sk753.pdf

2SK750 2SK750

isc N-Channel MOSFET Transistor 2SK753DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 160

 9.3. Size:232K  inchange semiconductor
 2sk757.pdf

2SK750 2SK750

isc N-Channel MOSFET Transistor 2SK757DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 20

 9.4. Size:232K  inchange semiconductor
 2sk754.pdf

2SK750 2SK750

isc N-Channel MOSFET Transistor 2SK754DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 16

 9.5. Size:240K  inchange semiconductor
 2sk751.pdf

2SK750 2SK750

isc N-Channel MOSFET Transistor 2SK751DESCRIPTIONDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 1

 9.6. Size:234K  inchange semiconductor
 2sk758.pdf

2SK750 2SK750

isc N-Channel MOSFET Transistor 2SK758DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.7. Size:234K  inchange semiconductor
 2sk759.pdf

2SK750 2SK750

isc N-Channel MOSFET Transistor 2SK759DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay d

 9.8. Size:233K  inchange semiconductor
 2sk752.pdf

2SK750 2SK750

isc N-Channel MOSFET Transistor 2SK752DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 160V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switching applicationssuch as switching regulators, converters,relay drivers.ABSOLUTE MAXIMUM RATINGS(T =2

 9.9. Size:234K  inchange semiconductor
 2sk756.pdf

2SK750 2SK750

isc N-Channel MOSFET Transistor 2SK756DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXIMU

 9.10. Size:233K  inchange semiconductor
 2sk755.pdf

2SK750 2SK750

isc N-Channel MOSFET Transistor 2SK755DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =200V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 200

Другие MOSFET... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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