GP1M018A020XG datasheet, аналоги, основные параметры
Наименование производителя: GP1M018A020XG
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 94 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 180 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.17 Ohm
Тип корпуса: TO-252
TO-251
Аналог (замена) для GP1M018A020XG
- подборⓘ MOSFET транзистора по параметрам
GP1M018A020XG даташит
..1. Size:488K globalpower
gp1m018a020xg.pdf 
GP1M018A020CG GP1M018A020PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) MAX 100% avalanche tested 200V 18A
2.1. Size:370K globalpower
gp1m018a020xx.pdf 
GP1M018A020HG(H) GP1M018A020FG(H) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on)MAX 100% avalanche tested 200V 18A
8.1. Size:389K globalpower
gp1m013a050xx.pdf 
GP1M013A050H GP1M013A050FH VDSS = 550 V @Tjmax Features ID = 13A Low gate charge RDS(on) = 0.48 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M013A050H TO-220 GP1M013A050H RoHS GP1M013A050FH TO-220F GP1M013A050FH Halogen Free Absolute
8.2. Size:392K globalpower
gp1m015a050xx.pdf 
GP1M015A050H GP1M015A050FH VDSS = 550 V @Tjmax Features ID = 14A Low gate charge RDS(on) = 0.44 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M015A050H TO-220 GP1M015A050H RoHS GP1M015A050FH TO-220F GP1M015A050FH Halogen Free Absolute
8.3. Size:391K globalpower
gp1m016a025xx.pdf 
GP1M016A025HG GP1M016A025FG N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 250V 16A
8.4. Size:395K globalpower
gp1m011a050xxx.pdf 
GP1M011A050HS GP1M011A050FSH VDSS = 550 V @Tjmax Features ID = 10A Low gate charge RDS(ON) = 0.7 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M011A050HS TO-220 GP1M011A050HS RoHS/Fast Diode GP1M011A050FSH TO
8.5. Size:563K globalpower
gp1m016a060n.pdf 
GP1M016A060N N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A
8.6. Size:385K globalpower
gp1m012a060xx.pdf 
GP1M012A060H GP1M012A060FH VDSS = 660 V @Tjmax Features ID = 12A Low gate charge RDS(on) = 0.65 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M012A060H TO-220 GP1M012A060H RoHS GP1M012A060FH TO-220F GP1M012A060FH Halogen Free Absolute
8.7. Size:391K globalpower
gp1m016a060xx.pdf 
GP1M016A060H GP1M016A060F(H) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 16A
8.8. Size:387K globalpower
gp1m010a060xx.pdf 
GP1M010A060H GP1M010A060FH VDSS = 660 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 0.75 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M010A060H TO-220 GP1M010A060H RoHS GP1M010A060FH TO-220F GP1M010A060FH Halogen Free Absolute
8.9. Size:395K globalpower
gp1m011a050xx.pdf 
GP1M011A050H GP1M011A050FH VDSS = 550 V @Tjmax Features ID = 11A Low gate charge RDS(ON) = 0.67 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark GP1M011A050H TO-220 GP1M011A050H RoHS GP1M011A050FH TO-220F GP1M011A0
8.10. Size:521K globalpower
gp1m016a025xg.pdf 
GP1M016A025CG GP1M016A025PG N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 250V 16A
8.11. Size:550K globalpower
gp1m010a080n.pdf 
GP1M010A080N VDSS = 880 V @Tjmax Features ID = 10A Low gate charge RDS(on) = 1.05 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D G S Device Package Marking Remark GP1M010A080N TO-3P GP1M010A080N RoHS Absolute Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDS 900 V
8.12. Size:408K globalpower
gp1m010a080xx.pdf 
GP1M010A080H GP1M010A080FH VDSS = 880 V @Tjmax Features ID = 9.5A Low gate charge RDS(ON) = 1.05 (max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark GP1M010A080H TO-220 GP1M010A080H RoHS GP1M010A080FH TO-220F GP1M010A080FH Halogen Free Absolut
Другие IGBT... GP1M011A050XXX, GP1M012A060XX, GP1M013A050XX, GP1M015A050XX, GP1M016A025XG, GP1M016A025XX, GP1M016A060N, GP1M016A060XX, 10N60, GP1M018A020XX, GP1M020A050N, GP1M020A060M, GP1M020A060N, GP1M023A050N, GP1T025A120B, GP1T036A060B, GP1T040A120B
