GSM2319AS datasheet, подбор замены

 ..1. Size:951K  globaltech semi
 gsm2319as.pdf 

GSM2319AS 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m @VGS=-10V MOSFET, uses Advanced Trench -40V/-2.4A,RDS(ON)=120m @VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and Thes

 6.1. Size:1024K  globaltech semi
 gsm2319a.pdf 

GSM2319A 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-2.4A,RDS(ON)=130m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 8.1. Size:944K  globaltech semi
 gsm2317.pdf 

GSM2317 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.2A,RDS(ON)=67m @VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 8.2. Size:416K  globaltech semi
 gsm2311.pdf 

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench -20V/-3.2A,RDS(ON)=70m @VGS=2.5V Technology to provide excellent RDS(ON), low -20V/-2.8A,RDS(ON)=96m @VGS=1.8V gate charge. Super high density cell design for These devices are particularly suited f

 8.3. Size:422K  globaltech semi
 gsm2318a.pdf 

GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)=68m @VGS=10V MOSFET, uses Advanced Trench 40V/2.2A,RDS(ON)=88m @VGS=4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for low

 8.4. Size:1189K  globaltech semi
 gsm2312.pdf 

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V These devices are particularly suited for low Super high density cell design for e

 8.5. Size:461K  globaltech semi
 gsm2318.pdf 

GSM2318 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/2.8A,RDS(ON)=80m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta

 8.6. Size:847K  globaltech semi
 gsm2311a.pdf 

GSM2311A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=68m @VGS=-4.5V MOSFET, uses Advanced Trench -20V/-2.2A,RDS(ON)=80m @VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-1.8A,RDS(ON)=105m @VGS=-1.8V gate charge. Super high density cell design for These devices are parti

 8.7. Size:1178K  globaltech semi
 gsm2312a.pdf 

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.2A,RDS(ON)=48m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m @VGS=1.8V These devices are particularly suited for low Super high density cell design for