GSM2343A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GSM2343A
Маркировка: 43*
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 1.25 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 2.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 8 nC
Время нарастания (tr): 1000 ns
Выходная емкость (Cd): 115 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.07 Ohm
Тип корпуса: SOT-23
GSM2343A Datasheet (PDF)
gsm2343a.pdf
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GSM2343A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2343A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=70m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=92m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=180m@VGS=-1.8V Super high density cell design for These devices are part
gsm2341.pdf
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P-Channel Enhancement Mode MOSFET Product Description Features GSM2341, P-Channel enhancement mode -20V/-3.0A,RDS(ON)= 50m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.6A,RDS(ON)= 64m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)= 80m@VGS=-1.8V Super high density cell design for extremely These devices are particularly suited
gsm2317.pdf
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GSM2317 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2317, P-Channel enhancement mode -40V/-3.6A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-3.2A,RDS(ON)=67m@VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f
gsm2319as.pdf
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GSM2319AS 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319AS, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=90m@VGS=-10V MOSFET, uses Advanced Trench -40V/-2.4A,RDS(ON)=120m@VGS=-4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance andThes
gsm2311.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m@VGS=4.5V MOSFET, uses Advanced Trench -20V/-3.2A,RDS(ON)=70m@VGS=2.5V Technology to provide excellent RDS(ON), low -20V/-2.8A,RDS(ON)=96m@VGS=1.8V gate charge. Super high density cell design for These devices are particularly suited f
gsm2330.pdf
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GSM2330 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330, N-Channel enhancement mode 90V/2.8A,RDS(ON)=190m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=200m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2336a.pdf
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GSM2336A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2336A, N-Channel enhancement mode 30V/1.8A,RDS(ON)=380m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 30V/1.5A,RDS(ON)=480m@VGS=2.5V provide excellent RDS(ON), low gate charge. 30V/1.2A,RDS(ON)=900m@VGS=1.8V Super high density cell design for extremely These devices are p
gsm2324.pdf
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GSM2324 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324, N-Channel enhancement mode 100V/2.3A,RDS(ON)=285m@VGS=10V MOSFET, uses Advanced Trench Technology 100V/1.8A,RDS(ON)=295m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for lo
gsm2303a.pdf
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GSM2303A GSM2303A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.8A,RDS(ON)=145m@VGS=-10.0V GSM2303A, P-Channel enhancement mode -30V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-res
gsm2323.pdf
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GSM2323 GSM2323 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo
gsm2301as.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301AS, P-Channel enhancement mode -20V/-2.4A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low voltage
gsm2367as.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367AS, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=80m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.5A,RDS(ON)=98m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.2A,RDS(ON)=130m@VGS=-1.8V These devices are particularly suited for low Super high density cell
gsm2304a.pdf
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GSM2304A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304A, N-Channel enhancement mode 30V/2.6A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=108m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce
gsm2302as.pdf
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20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302AS, N-Channel enhancement mode 20V/2.4A,RDS(ON)=90m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=110m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exceptional on-
gsm2330a.pdf
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GSM2330A 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM2330A, N-Channel enhancement mode 90V/2.8A,RDS(ON)=200m@VGS=10V MOSFET, uses Advanced Trench Technology 90V/2.0A,RDS(ON)=210m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2333a.pdf
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GSM2333A GSM2333A 25V P-Channel Enhancement Mode MOSFET Product Description Features -25V/-2.8A,RDS(ON)=145m@VGS=-10V GSM2333A, P-Channel enhancement mode -25V/-2.4A,RDS(ON)=180m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resis
gsm2301s.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301S, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=120m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.0A,RDS(ON)=170m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for These devices are particularly suited for low extremely low RDS (ON) volt
gsm2309a.pdf
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GSM2309A 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309A, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench -60V/-1.6A,RDS(ON)=320m@VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maxim
gsm2309.pdf
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GSM2309 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM2309, P-Channel enhancement mode -60V/-1.8A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench -60V/-1.4A,RDS(ON)=320m@VGS=-4.5V Technology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) Exceptional on-resistance and maximum
gsm2354.pdf
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GSM2354 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2354, N-Channel enhancement mode 100V/3.2A,RDS(ON)=145m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=160m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2318a.pdf
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GSM2318A 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318A, N-Channel enhancement mode 40V/2.6A,RDS(ON)=68m@VGS=10VMOSFET, uses Advanced Trench 40V/2.2A,RDS(ON)=88m@VGS=4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for low
gsm2301a.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-2.6A,RDS(ON)=120m@VGS=-4.5V GSM2301A, P-Channel enhancement mode -20V/-2.2A,RDS(ON)=170m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) These devices are particularly suited for low
gsm2337a.pdf
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GSM2337A GSM2337A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-1.2A,RDS(ON)=890m@VGS=-10V GSM2337A, P-Channel enhancement mode -30V/-0.6A,RDS(ON)=1450m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi
gsm2312.pdf
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20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m@VGS=1.8V These devices are particularly suited for low Super high density cell design for e
gsm2301.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2301, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=105m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=155m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volta
gsm2306a.pdf
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GSM2306A 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306A, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology 20V/1.5A,RDS(ON)=340m@VGS=2.5V to provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particularl
gsm2376.pdf
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GSM2376 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2376, N-Channel enhancement mode 60V/3.6A,RDS(ON)=70m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/2.8A,RDS(ON)=78m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Exce
gsm2304.pdf
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GSM2304 GSM230430V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304, N-Channel enhancement mode 30V/3.6A,RDS(ON)=78m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.8A,RDS(ON)=105m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2304as.pdf
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GSM2304AS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304AS, N-Channel enhancement mode 30V/2.4A,RDS(ON)=65m@VGS=10VMOSFET, uses Advanced Trench Technology 30V/2.0A,RDS(ON)=90m@VGS=4.5Vto provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOT-2
gsm2379.pdf
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GSM2379 GSM2379 60V P-Channel Enhancement Mode MOSFET Product Description Features -60V/-3.6A,RDS(ON)=135m@VGS=-10.0V GSM2379, P-Channel enhancement mode -60V/-2.6A,RDS(ON)=150m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist
gsm2307a.pdf
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GSM2307A GSM2307A 20V P-Channel Enhancement Mode MOSFET Product Description Features -20V/-1.8A,RDS(ON)=520m@VGS=-4.5V GSM2307A, P-Channel enhancement mode -20V/-1.5A,RDS(ON)=870m@VGS=-2.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resi
gsm2367s.pdf
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20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2367S, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=65m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.4A,RDS(ON)=80m@VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.0A,RDS(ON)=105m@VGS=-1.8V These devices are particularly suited for low Super high density cell d
gsm2318.pdf
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GSM2318 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM2318, N-Channel enhancement mode 40V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/2.8A,RDS(ON)=80m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta
gsm2319a.pdf
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GSM2319A 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM2319A, P-Channel enhancement mode -40V/-3.0A,RDS(ON)=100m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-2.4A,RDS(ON)=130m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f
gsm2308a.pdf
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GSM2308A 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308A, N-Channel enhancement mode 60V/2.8A,RDS(ON)=135m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.0A,RDS(ON)=145m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2311a.pdf
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GSM2311A 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM2311A, P-Channel enhancement mode -20V/-2.8A,RDS(ON)=68m@VGS=-4.5V MOSFET, uses Advanced Trench -20V/-2.2A,RDS(ON)=80m@VGS=-2.5V Technology to provide excellent RDS(ON), low -20V/-1.8A,RDS(ON)=105m@VGS=-1.8V gate charge. Super high density cell design for These devices are parti
gsm2324a.pdf
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GSM2324A 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM2324A, N-Channel enhancement mode 100V/2.3A,RDS(ON)=310m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.8A,RDS(ON)=320m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
gsm2303.pdf
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GSM2303 GSM2303 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.6A,RDS(ON)=130m@VGS=-10.0V GSM2303, P-Channel enhancement mode -30V/-3.2A,RDS(ON)=170m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to Super high density cell design for extremely provide excellent RDS(ON), low gate charge. low RDS (ON) Exceptional on-resist
gsm2306ae.pdf
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GSM2306AE 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2306AE, N-Channel enhancement mode 20V/1.8A,RDS(ON)=280m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/1.5A,RDS(ON)=340m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.2A,RDS(ON)=750m@VGS=1.8V Super high density cell design for These devices are particula
gsm2308.pdf
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GSM2308 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM2308, N-Channel enhancement mode 60V/3.6A,RDS(ON)=130m@VGS=10V MOSFET, uses Advanced Trench Technology 60V/2.8A,RDS(ON)=140m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm2302s.pdf
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GSM2302S GSM2302S 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2302S, N-Channel enhancement mode 20V/3.6A,RDS(ON)=85m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=100m@VGS=2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
gsm2323a.pdf
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GSM2323A 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM2323A, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=155m@VGS=-10VMOSFET, uses Advanced Trench -30V/-2.4A,RDS(ON)=240m@VGS=-4.5VTechnology to provide excellent RDS(ON), low Super high density cell design for gate charge. extremely low RDS (ON) These devices are particularly suited for
gsm2312a.pdf
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20V N-Channel Enhancement Mode MOSFET Product Description Features GSM2312A, N-Channel enhancement mode 20V/2.8A,RDS(ON)=45m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.2A,RDS(ON)=48m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=64m@VGS=1.8V These devices are particularly suited for low Super high density cell design for
gsm2304s.pdf
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GSM2304S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM2304S, N-Channel enhancement mode 30V/3.6A,RDS(ON)=60m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=85m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (O
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