GSM3326WS datasheet, подбор замены

 ..1. Size:1359K  globaltech semi
 gsm3326ws.pdf 

GSM3326WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3326WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/12A,RDS(ON)=36m @VGS=10V provide excellent RDS(ON), low gate charge. 30V/10A,RDS(ON)=46m @VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=60m @VGS=-10V voltage

 9.1. Size:816K  globaltech semi
 gsm3310w.pdf 

GSM3310W GSM3310W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3310W, N-Channel enhancement mode 30V/16A,RDS(ON)=17m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=19m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited f

 9.2. Size:1456K  globaltech semi
 gsm3346w.pdf 

GSM3346W 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3346W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/15A,RDS(ON)=28m @VGS=10V provide excellent RDS(ON), low gate charge. 40V/12A,RDS(ON)=38m @VGS=4.5V P-Channel These devices are particularly suited for low -40V/-12A,RDS(ON)=45m @VGS=-10V voltage p

 9.3. Size:897K  globaltech semi
 gsm3309ws.pdf 

GSM3309WS GSM3309WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=11m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited

 9.4. Size:1204K  globaltech semi
 gsm3366w.pdf 

GSM3366W 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM3366W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/12A,RDS(ON)=48m @VGS=10V provide excellent RDS(ON), low gate charge. 60V/10A,RDS(ON)=54m @VGS=4.5V P-Channel These devices are particularly suited for low -60V/-8A,RDS(ON)=105m @VGS=-10V voltage p

 9.5. Size:868K  globaltech semi
 gsm3302w.pdf 

GSM3302W GSM3302W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/12A,RDS(ON)=18m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m @VGS=1.8V Super high density cell design for extremely These devices are

 9.6. Size:856K  globaltech semi
 gsm3316w.pdf 

GSM3316W GSM3316W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3316W, N-Channel enhancement mode 60V/8A,RDS(ON)=140m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/6A,RDS(ON)=148m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 9.7. Size:865K  globaltech semi
 gsm3306ws.pdf 

GSM3306WS GSM3306WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7.4m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly sui