GSM3405
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: GSM3405
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 1.25
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 4
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 25
ns
Cossⓘ - Выходная емкость: 135
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04
Ohm
Тип корпуса:
SOT-23-3L
Аналог (замена) для GSM3405
-
подбор ⓘ MOSFET транзистора по параметрам
GSM3405
Datasheet (PDF)
..1. Size:851K globaltech semi
gsm3405.pdf 
GSM3405 GSM3405 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-2.8A,RDS(ON)=50m@VGS=-4.5V provide excellent RDS(ON) low gate charge. These Super high density cell design for extremely devices are particularly suited for low
8.1. Size:891K globaltech semi
gsm3400.pdf 
GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m@VGS=2.5V gate charge. These devices are particularly Super high density cell des
8.2. Size:867K globaltech semi
gsm3404.pdf 
GSM3404 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.2A,RDS(ON)=34m@VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta
8.3. Size:898K globaltech semi
gsm3403a.pdf 
GSM3403A GSM3403A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.6A,RDS(ON)=130m@VGS=-10V GSM3403A, P-Channel enhancement mode -30V/-2.2A,RDS(ON)=160m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -30V/-1.2A,RDS(ON)=270m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremel
8.4. Size:453K globaltech semi
gsm3402a.pdf 
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=87m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m@VGS=2.5V These devices are particularly suited for low Super high density cell design for
8.5. Size:922K globaltech semi
gsm3400a.pdf 
GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m@VGS=2.5V Super high density cell design for These devices are particularly suited for lo
8.6. Size:885K globaltech semi
gsm3406s.pdf 
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
8.7. Size:864K globaltech semi
gsm3407s.pdf 
GSM3407S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=95m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for
8.8. Size:884K globaltech semi
gsm3406.pdf 
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
8.9. Size:846K globaltech semi
gsm3407as.pdf 
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.4A,RDS(ON)=102m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON)
8.10. Size:1144K globaltech semi
gsm3402.pdf 
GSM3402 GSM3402 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402, N-Channel enhancement mode 30V/4.0A,RDS(ON)=75m@VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=80m@VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=100m@VGS=2.5V gate charge. These devices are particularly Super high density cell de
8.11. Size:863K globaltech semi
gsm3406a.pdf 
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
8.12. Size:1426K globaltech semi
gsm3401s.pdf 
GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m@VGS=-2.5V Super high density cell design for extremely These devi
8.13. Size:898K globaltech semi
gsm3403.pdf 
GSM3403 GSM3403 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.0A,RDS(ON)=125m@VGS=-10V GSM3403, P-Channel enhancement mode -30V/-2.6A,RDS(ON)=155m@VGS=-4.5V MOSFET, uses Advanced Trench Technology to -30V/-1.2A,RDS(ON)=220m@VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely
8.14. Size:452K globaltech semi
gsm3400as.pdf 
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m@VGS=2.5V These devices are particularly suited for low Super high density cell design for
8.15. Size:877K globaltech semi
gsm3406as.pdf 
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.4A,RDS(ON)=55m@VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) powe
8.16. Size:612K globaltech semi
gsm3401as.pdf 
30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m@VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m@VGS=-2.5V These devices are particularly suited for low Super high density cell de
8.17. Size:921K globaltech semi
gsm3400s.pdf 
GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m@VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m@VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m@VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The
Другие MOSFET... GSM3400S
, GSM3401AS
, GSM3401S
, GSM3402
, GSM3402A
, GSM3403
, GSM3403A
, GSM3404
, 5N65
, GSM3406
, GSM3406A
, GSM3406AS
, GSM3406S
, GSM3407AS
, GSM3407S
, GSM3410
, GSM3411
.
