GSM3497 datasheet, подбор замены

 ..1. Size:821K  globaltech semi
 gsm3497.pdf 

GSM3497 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3497, P-Channel enhancement mode -20V/-3.8A,RDS(ON)=100m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.6A,RDS(ON)=140m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=190m @VGS=-1.8V Super high density cell design for extremely These device

 9.1. Size:891K  globaltech semi
 gsm3400.pdf 

GSM3400 GSM3400 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400, N-Channel enhancement mode 30V/4.0A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=52m @VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=58m @VGS=2.5V gate charge. These devices are particularly Super high density cell des

 9.2. Size:882K  globaltech semi
 gsm3458.pdf 

GSM3458 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458, N-Channel enhancement mode 60V/5.6A,RDS(ON)=60m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=66m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.3. Size:875K  globaltech semi
 gsm3413.pdf 

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.6A,RDS(ON)=130m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=195m @VGS=-1.8V Super high density cell design for extremely These devices are particularly su

 9.4. Size:841K  globaltech semi
 gsm3456.pdf 

GSM3456 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456, N-Channel enhancement mode 30V/5.6A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.5. Size:966K  globaltech semi
 gsm3459.pdf 

GSM3459 60V P-Channel Enhancement Mode MOSFET Product Description Features GSM3459, P-Channel enhancement mode -60V/-4.8A,RDS(ON)=128m @VGS=-10V MOSFET, uses Advanced Trench Technology to -60V/-3.6A,RDS(ON)=138m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.6. Size:1106K  globaltech semi
 gsm3416.pdf 

20V N-Channel Enhancement Mode MOSFET Product Description Features 20V/4.0A,RDS(ON)=26m @VGS=4.5V GSM3416, N-Channel enhancement mode 20V/3.2A,RDS(ON)=30m @VGS=2.5V MOSFET, uses Advanced Trench Technology to 20V/2.8A,RDS(ON)=36m @VGS=1.8V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

 9.7. Size:867K  globaltech semi
 gsm3404.pdf 

GSM3404 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3404, N-Channel enhancement mode 30V/4.0A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.2A,RDS(ON)=34m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) Volta

 9.8. Size:898K  globaltech semi
 gsm3403a.pdf 

GSM3403A GSM3403A 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-2.6A,RDS(ON)=130m @VGS=-10V GSM3403A, P-Channel enhancement mode -30V/-2.2A,RDS(ON)=160m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -30V/-1.2A,RDS(ON)=270m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremel

 9.9. Size:820K  globaltech semi
 gsm3413a.pdf 

20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3413A, P-Channel enhancement mode -20V/-2.6A,RDS(ON)=110m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-2.2A,RDS(ON)=150m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-1.2A,RDS(ON)=205m @VGS=-1.8V Super high density cell design for extremely These devices are par

 9.10. Size:895K  globaltech semi
 gsm3466.pdf 

 9.11. Size:438K  globaltech semi
 gsm3454.pdf 

GSM3454 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM3454, N-Channel enhancement mode 40V/5.6A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/3.6A,RDS(ON)=74m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.12. Size:453K  globaltech semi
 gsm3402a.pdf 

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=82m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=87m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=110m @VGS=2.5V These devices are particularly suited for low Super high density cell design for

 9.13. Size:841K  globaltech semi
 gsm3452.pdf 

GSM3452 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3452, N-Channel enhancement mode 30V/5.6A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.2A,RDS(ON)=52m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/3.0A,RDS(ON)=58m @VGS=2.5V Super high density cell design for extremely These devices are particu

 9.14. Size:805K  globaltech semi
 gsm3458bw.pdf 

GSM3458BW 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM3458BW, N-Channel enhancement mode 60V/5.6A,RDS(ON)=135m @VGS=10V MOSFET, uses Advanced Trench Technology to 60V/3.8A,RDS(ON)=145m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for l

 9.15. Size:883K  globaltech semi
 gsm3426.pdf 

GSM3426 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3426, N-Channel enhancement mode 20V/4.0A,RDS(ON)=36m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.2A,RDS(ON)=40m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=52m @VGS=1.8V Super high density cell design for extremely These devices are partic

 9.16. Size:922K  globaltech semi
 gsm3400a.pdf 

GSM3400A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=54m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/1.5A,RDS(ON)=65m @VGS=2.5V Super high density cell design for These devices are particularly suited for lo

 9.17. Size:939K  globaltech semi
 gsm3484s.pdf 

GSM3484S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484S, N-Channel enhancement mode 30V/30A,RDS(ON)=13m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/18A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.18. Size:885K  globaltech semi
 gsm3406s.pdf 

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406S, N-Channel enhancement mode 30V/4.0A,RDS(ON)=40m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.19. Size:864K  globaltech semi
 gsm3407s.pdf 

GSM3407S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-3.2A,RDS(ON)=95m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.20. Size:907K  globaltech semi
 gsm3485.pdf 

GSM3485 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3485, P-Channel enhancement mode -30V/-12A,RDS(ON)=28m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-10A,RDS(ON)=37m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.21. Size:889K  globaltech semi
 gsm3410.pdf 

GSM3410 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3410, N-Channel enhancement mode 30V/6.0A,RDS(ON)=27m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/4.5A,RDS(ON)=30m @VGS=4.5V provide excellent RDS (ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TSOP-6 p

 9.22. Size:868K  globaltech semi
 gsm3456s.pdf 

GSM3456S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3456S, N-Channel enhancement mode 30V/5.4A,RDS(ON)=40m @VGS=10.0V MOSFET, uses Advanced Trench Technology to 30V/4.8A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

 9.23. Size:872K  globaltech semi
 gsm3484.pdf 

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3484, N-Channel enhancement mode 30V/12A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

 9.24. Size:851K  globaltech semi
 gsm3405.pdf 

GSM3405 GSM3405 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m @VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-2.8A,RDS(ON)=50m @VGS=-4.5V provide excellent RDS(ON) low gate charge. These Super high density cell design for extremely devices are particularly suited for low

 9.25. Size:884K  globaltech semi
 gsm3406.pdf 

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406, N-Channel enhancement mode 30V/4.0A,RDS(ON)=42m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.5A,RDS(ON)=52m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.26. Size:846K  globaltech semi
 gsm3407as.pdf 

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-2.4A,RDS(ON)=102m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON)

 9.27. Size:772K  globaltech semi
 gsm3424a.pdf 

GSM3424A 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=85m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.0A,RDS(ON)=95m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/1.5A,RDS(ON)=265m @VGS=4.5V Super high density cell design for extremely These devices are

 9.28. Size:1144K  globaltech semi
 gsm3402.pdf 

GSM3402 GSM3402 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3402, N-Channel enhancement mode 30V/4.0A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench 30V/3.5A,RDS(ON)=80m @VGS=4.5V Technology to provide excellent RDS(ON), low 30V/2.8A,RDS(ON)=100m @VGS=2.5V gate charge. These devices are particularly Super high density cell de

 9.29. Size:1087K  globaltech semi
 gsm3414s.pdf 

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414S, N-Channel enhancement mode 20V/4.0A,RDS(ON)=50m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.4A,RDS(ON)=60m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=105m @VGS=1.8V Super high density cell design for extremely These devices are particularly suited for l

 9.30. Size:863K  globaltech semi
 gsm3406a.pdf 

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406A, N-Channel enhancement mode 30V/2.4A,RDS(ON)=48m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/1.8A,RDS(ON)=58m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

 9.31. Size:733K  globaltech semi
 gsm3411.pdf 

GSM3411 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3411, P-Channel enhancement mode -30V/-6.0A,RDS(ON)=36m @VGS=10V MOSFET, uses Advanced Trench Technology to -30V/-4.5A,RDS(ON)=46m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.32. Size:1426K  globaltech semi
 gsm3401s.pdf 

GSM3401S GSM3401S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401S, P-Channel enhancement mode -30V/-4.0A RDS(ON)=65m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-3.2A RDS(ON)=80m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.0A RDS(ON)=105m @VGS=-2.5V Super high density cell design for extremely These devi

 9.33. Size:912K  globaltech semi
 gsm3425.pdf 

GSM3425 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3425, P-Channel enhancement mode -20V/-4.0A,RDS(ON)=56m @VGS=4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.2A,RDS(ON)=70m @VGS=2.5V provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m @VGS=1.8V Super high density cell design for extremely These devices are

 9.34. Size:883K  globaltech semi
 gsm3424.pdf 

GSM3424 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3424, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=85m @VGS=4.5V provide excellent RDS(ON) ,low gate charge. 30V/2.2A,RDS(ON)=155m @VGS=2.5V Super high density cell design for extremely These devices are pa

 9.35. Size:898K  globaltech semi
 gsm3403.pdf 

GSM3403 GSM3403 30V P-Channel Enhancement Mode MOSFET Product Description Features -30V/-3.0A,RDS(ON)=125m @VGS=-10V GSM3403, P-Channel enhancement mode -30V/-2.6A,RDS(ON)=155m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -30V/-1.2A,RDS(ON)=220m @VGS=-2.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely

 9.36. Size:1310K  globaltech semi
 gsm3414a.pdf 

20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3414A, N-Channel enhancement mode 20V/2.4A,RDS(ON)=70m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/2.0A,RDS(ON)=80m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/1.8A,RDS(ON)=100m @VGS=1.8V Super high density cell design for extremely These devices are particularly suited for l

 9.37. Size:895K  globaltech semi
 gsm3436.pdf 

GSM3436 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3436, N-Channel enhancement mode 30V/3.6A,RDS(ON)=72m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=82m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=160m @VGS=2.5V Super high density cell design for extremely These devices are partic

 9.38. Size:452K  globaltech semi
 gsm3400as.pdf 

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3400AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=50m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.5A,RDS(ON)=55m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=75m @VGS=2.5V These devices are particularly suited for low Super high density cell design for

 9.39. Size:1009K  globaltech semi
 gsm3434w.pdf 

GSM3434W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM3434W, N-Channel enhancement mode 100V/3.2A,RDS(ON)=170m @VGS=10V MOSFET, uses Advanced Trench Technology to 100V/2.6A,RDS(ON)=185m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low Ex

 9.40. Size:877K  globaltech semi
 gsm3406as.pdf 

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3406AS, N-Channel enhancement mode 30V/2.8A,RDS(ON)=45m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/2.4A,RDS(ON)=55m @VGS=4.5V provide excellent RDS(ON), low gate charge. These Super high density cell design for extremely devices are particularly suited for low voltage low RDS (ON) powe

 9.41. Size:895K  globaltech semi
 gsm3432.pdf 

GSM3432 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3432, N-Channel enhancement mode 30V/3.6A,RDS(ON)=75m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/3.0A,RDS(ON)=80m @VGS=4.5V provide excellent RDS(ON), low gate charge. 30V/2.2A,RDS(ON)=100m @VGS=2.5V Super high density cell design for extremely These devices are partic

 9.42. Size:920K  globaltech semi
 gsm3415.pdf 

GSM3415 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM3415, P-Channel enhancement mode -20V/-4.9A,RDS(ON)=45m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.4A,RDS(ON)=58m @VGS=-2.5V provide excellent RDS(ON) ,low gate charge. -20V/-2.2A,RDS(ON)=85m @VGS=-1.8V Super high density cell design for extremely These devic

 9.43. Size:714K  globaltech semi
 gsm3460.pdf 

GSM3460 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3460, N-Channel enhancement mode 20V/5.8A,RDS(ON)=26m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/4.2A,RDS(ON)=30m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/2.8A,RDS(ON)=36m @VGS=1.8V Super high density cell design for extremely These devices are partic

 9.44. Size:880K  globaltech semi
 gsm3481s.pdf 

GSM3481S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3481S, P-Channel enhancement mode -30V/-5.4A,RDS(ON)=62m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-4.2A,RDS(ON)=90m @VGS=-4.5V provide excellent RDS(ON) ,low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suit

 9.45. Size:612K  globaltech semi
 gsm3401as.pdf 

30V P-Channel Enhancement Mode MOSFET Product Description Features GSM3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70m @VGS=-10.0V MOSFET, uses Advanced Trench Technology to -30V/-1.8 RDS(ON)=80m @VGS=-4.5V provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105m @VGS=-2.5V These devices are particularly suited for low Super high density cell de

 9.46. Size:842K  globaltech semi
 gsm3430w.pdf 

GSM3430W 90V N-Channel Enhancement Mode MOSFET Product Description Features GSM3430W, N-Channel enhancement mode 90V/4.0A,RDS(ON)=150m @VGS=10V MOSFET, uses Advanced Trench Technology to 90V/3.2A,RDS(ON)=155m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low

 9.47. Size:921K  globaltech semi
 gsm3400s.pdf 

GSM3400S GSM3400S 30V N-Channel Enhancement Mode MOSFET Product Description Features 30V/4.0A,RDS(ON)=42m @VGS=10V GSM3400S, N-Channel enhancement mode 30V/3.0A,RDS(ON)=44m @VGS=4.5V MOSFET, uses Advanced Trench Technology 30V/2.6A,RDS(ON)=50m @VGS=2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) The

 9.48. Size:948K  globaltech semi
 gsm3446.pdf 

GSM3446 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3446, N-Channel enhancement mode 20V/4.0A,RDS(ON)=58m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/3.6A,RDS(ON)=68m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/3.0A,RDS(ON)=88m @VGS=1.8V Super high density cell design for extremely These devices are partic