GSM4510S Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: GSM4510S
Тип транзистора: MOSFET
Полярность: NP
Pd ⓘ - Максимальная рассеиваемая мощность: 2.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 45 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.15 Ohm
Тип корпуса: SOP-8P
Аналог (замена) для GSM4510S
GSM4510S Datasheet (PDF)
gsm4510s.pdf

GSM4510S 100V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 100V/6.8A,RDS(ON)=150m@VGS=10V provide excellent RDS(ON), low gate charge. 100V/5.6A,RDS(ON)=165m@VGS=4.5V P-Channel These devices are particularly suited for low -100V/-6.2A,RDS(ON)=198m@VGS=
gsm4516w.pdf

GSM4516W 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltag
gsm4516.pdf

GSM4516 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltage power man
gsm4559.pdf

GSM4559 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4559, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/6.8A,RDS(ON)=42m@VGS=10V provide excellent RDS(ON), low gate charge. 60V/5.6A,RDS(ON)=50m@VGS=4.5V P-Channel These devices are particularly suited for low -60V/-4.0A,RDS(ON)=100m@VGS=-10V v
Другие MOSFET... GSM4435 , GSM4435S , GSM4435W , GSM4435WS , GSM4440 , GSM4440W , GSM4447 , GSM4486 , IRF9540N , GSM4516 , GSM4516W , GSM4535 , GSM4535W , GSM4539S , GSM4539WS , GSM4546 , GSM4559 .
History: WTC3401 | KF5N53D | WMB31430DN | SMG2328NE | WMB020N06HG4 | FKG1020 | TPC8034-H
History: WTC3401 | KF5N53D | WMB31430DN | SMG2328NE | WMB020N06HG4 | FKG1020 | TPC8034-H



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