GSM4599 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: GSM4599
Маркировка: 4599
Тип транзистора: MOSFET
Полярность: NP
Pdⓘ - Максимальная рассеиваемая мощность: 2.8 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 10 nC
trⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 110 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.022 Ohm
Тип корпуса: SOP-8P
GSM4599 Datasheet (PDF)
gsm4599.pdf
GSM4599 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4599, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/8A,RDS(ON)=22m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)=36m@VGS=4.5V P-Channel These devices are particularly suited for low -40V/-7.2A,RDS(ON)=37m@VGS=-10V voltage power m
gsm4599w.pdf
GSM4599W 40V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4599W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 40V/8A,RDS(ON)=22m@VGS=10V provide excellent RDS(ON), low gate charge. 40V/6A,RDS(ON)=28m@VGS=4.5V P-Channel These devices are particularly suited for low -40V/-7.2A,RDS(ON)=42m@VGS=-10V volt
gsm4516w.pdf
GSM4516W 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516W, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltag
gsm4559.pdf
GSM4559 60V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4559, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 60V/6.8A,RDS(ON)=42m@VGS=10V provide excellent RDS(ON), low gate charge. 60V/5.6A,RDS(ON)=50m@VGS=4.5V P-Channel These devices are particularly suited for low -60V/-4.0A,RDS(ON)=100m@VGS=-10V v
gsm4516.pdf
GSM4516 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4516, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/8A,RDS(ON)=15m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/6A,RDS(ON)=20m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-8A,RDS(ON)=28m@VGS=-10V voltage power man
gsm4510s.pdf
GSM4510S 100V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4510S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 100V/6.8A,RDS(ON)=150m@VGS=10V provide excellent RDS(ON), low gate charge. 100V/5.6A,RDS(ON)=165m@VGS=4.5V P-Channel These devices are particularly suited for low -100V/-6.2A,RDS(ON)=198m@VGS=
gsm4535.pdf
40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V MOSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) volt
gsm4539ws.pdf
GSM4539WS 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539WS, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=36m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=46m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=62m@VGS=-10V
gsm4546.pdf
GSM4546 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4546, N-Channel enhancement mode 40V/6.8A,RDS(ON)=52m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/5.6A,RDS(ON)=70m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm4535w.pdf
GSM4535W 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4535W, P-Channel enhancement mode -40V/-6.2A,RDS(ON)= 35m@VGS= -10V OSFET, uses Advanced Trench Technology to -40V/-5.2A,RDS(ON)= 50m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited
gsm4539s.pdf
GSM4539S 30V N & P Pair Enhancement Mode MOSFET Product Description Features GSM4539S, N & P Pair enhancement mode N-Channel MOSFET, uses Advanced Trench Technology to 30V/5.8A,RDS(ON)=40m@VGS=10V provide excellent RDS(ON), low gate charge. 30V/5.5A,RDS(ON)=50m@VGS=4.5V P-Channel These devices are particularly suited for low -30V/-5.4A,RDS(ON)=65m@VGS=-10V
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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